SID200N12 Sirectifier Semiconductors, SID200N12 Datasheet
SID200N12
Manufacturer Part Number
SID200N12
Description
NPT IGBT Modules
Manufacturer
Sirectifier Semiconductors
Datasheet
1.SID200N12.pdf
(2 pages)
www.DataSheet4U.com
IGBT
Inverse Diode
Freewheeling diode
Absolute Maximum Ratings
Symbol
T
I
I
V
F
I
V
Vj,
F
I
I
V
I
I
CRM
FRM
FSM
FRM
FSM
I
= -I
CES
GES
= -I
C
isol
(T
stg
C
C
)
T
T
t
T
T
t
T
AC, 1min
T
T
P
P
C
C
C
C
C
C
OPERATION
=10ms; sin.;T
=10ms; sin.;T
= 25(80)
= 25(80)
= 25(80)
= 25(80)
= 25(80)
= 25(80)
o
o
o
o
o
o
< _ T
C
C, t
C
C, t
C
C, t
stg
j
j
P
P
=150
=150
P
=1ms
=1ms
=1ms
Conditions
o
o
C
C
NPT IGBT Modules
SID200N12
Dimensions in mm (1mm = 0.0394")
T
C
= 25
_
40...+150(125)
400(360)
260(180)
o
200(180)
400(360)
200(130)
400(360)
Values
C , unless otherwise specified
1200
1450
1800
2500
_
+20
Units
o
A
A
A
A
A
A
C
V
V
V
A
A
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SID200N12 Summary of contents
Page 1
... C I FRM T = 25(80 =10ms; sin.;T FSM P Freewheeling diode T = 25(80 25(80) FRM =10ms; sin.;T P FSM SID200N12 NPT IGBT Modules Conditions =1ms P < stg =1ms P o =150 =1ms P o =150 ...
Page 2
... Thermal Characteristics R per IGBT th(j-c) R per Inverse Diode th(j-c)D R per FWD th(j-c)FD R per module th(c-s) Mechanical Data M to heatsink terminals SID200N12 NPT IGBT Modules Conditions =6mA 25(125) C CES 25(125 15V; chip level GE = 25V 1MHz o = 25(125) C ...