FGA25N120AND Fairchild Semiconductor, FGA25N120AND Datasheet
FGA25N120AND
Related parts for FGA25N120AND
FGA25N120AND Summary of contents
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... 100 100 100 C C Parameter IGBT = 2 25A CE(sat 235ns (typ FGA25N120AND Units 1200 150 A 310 W 125 W -55 to +150 C -55 to +150 C 300 C Typ. Max. Units -- 0.4 C/W -- 2.0 C C/W FGA25N120AND Rev. A ...
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... V -- 2 2100 -- pF -- 180 -- 170 -- 4.8 7 1.0 1 5.7 8 180 -- 200 300 105 160 Typ. Max. Units -- 2 235 350 ns -- 300 -- -- 3130 4700 nC -- 4650 -- FGA25N120AND Rev. A ...
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... Common Emitter T = 125℃ [V] GE Fig 6. Saturation Voltage vs 15V 2 4 Collector-Emitter Voltage, V [V] CE Vcc = 600V load Current : peak of square wave 1 10 100 1000 Frequency [kHz] 40A 25A I = 12. Gate-Emitter Voltage FGA25N120AND Rev ...
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... Gate Resistance ± 15V = 600V 25℃ = 125℃ Eon Eoff Gate Resistance ± 15V 25℃ = 125℃ td(off Collector Current, I [A] C Collector Current FGA25N120AND Rev ...
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... Gate Charge, Q [nC] g Safe Operating Area V = 15V 125℃ 100 1000 Collector-Emitter Voltage, V [V] CE Pdm Pdm Duty factor Duty factor Peak Tj = Pdm Zthjc + T Peak Tj = Pdm Zthjc + 0 FGA25N120AND Rev. A ...
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... 125 ℃ ℃ 1.6 2.0 [V] F Fig 19. Reverse Recovery Current 300 200 100 [A] F Fig 21. Reverse Recovery Time di/dt = 200A/ s di/dt = 100A Forward Current , I [A] F di/dt = 100A/ s di/dt = 200A Forward Current , I [A] F FGA25N120AND Rev. A ...
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... Package Dimension 15.60 13.60 ø3.20 0.10 9.60 2.00 0.20 3.00 0.20 1.00 0.20 5.45TYP [5.45 ] 0.30 ©2003 Fairchild Semiconductor Corporation TO-3P 0.20 0.20 0.20 5.45TYP [5.45 ] 0.30 4.80 0.20 +0.15 1.50 –0.05 1.40 0.20 +0.15 0.60 –0.05 Dimensions in Millimeters FGA25N120AND Rev. A ...
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... TRADEMARKS The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended exhaustive list of all such trademarks. ACEx™ FACT™ ActiveArray™ FACT Quiet series™ ® Bottomless™ FAST CoolFET™ FASTr™ ...