GT60M322 Toshiba, GT60M322 Datasheet

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GT60M322

Manufacturer Part Number
GT60M322
Description
Silicon N Channel IGBT
Manufacturer
Toshiba
Datasheet

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Company
Part Number
Manufacturer
Quantity
Price
Part Number:
GT60M322
Manufacturer:
TOHSIBA
Quantity:
9 800
Voltage Resonance Inverter Switching Application
Current Resonance Inverter Switching Application
Maximum Ratings
Thermal Characteristics
Equivalent Circuit
Enhancement mode type
High speed
Low saturation voltage : V
FRD included between emitter and collector
TO-3P(LH) (Toshiba package name)
Collector-emitter voltage
Gate-emitter voltage
Collector current
Diode forward current
Collector power
dissipation
Junction temperature
Storage temperature range
Thermal resistance (IGBT)
Thermal resistance (diode)
Gate
Characteristics
Characteristics
TOSHIBA Insulated Gate Bipolar Transistor Silicon N Channel IGBT
Collector
Emitter
DC
1ms
DC
Pulsed
@ Tc = 100°C
@ Tc = 25°C
(Ta = 25°C)
: t
f
CE (sat)
= 0.15 µs (typ.) (I
= 2.3 V (typ.) (I
Symbol
Symbol
R
R
GT60M322
V
V
T
th (j-c)
th (j-c)
I
I
P
GES
CES
I
CP
I
FP
T
stg
C
F
C
j
C
= 60 A)
−55 to 150
C
Marking
Rating
= 60 A)
Max
0.66
1.38
950
±25
120
190
150
60
25
50
76
1
°C/W
°C/W
Unit
Unit
°C
°C
W
GT60M322
V
V
A
A
TOSHIBA
JAPAN
Weight: 9.75 g (typ.)
JEDEC
JEITA
TOSHIBA
Part No. (or abbreviation code)
Lot No.
A line indicates
lead (Pb)-free package or
lead (Pb)-free finish.
2-21F2C
GT60M322
2004-07-06
Unit: mm

Related parts for GT60M322

GT60M322 Summary of contents

Page 1

... T −55 to 150 °C stg Symbol Max Unit R 0.66 °C/W th (j-c) R 1.38 °C/W th (j-c) Marking TOSHIBA GT60M322 JAPAN 1 GT60M322 Unit: mm JEDEC ― JEITA ― TOSHIBA 2-21F2C Weight: 9.75 g (typ.) Part No. (or abbreviation code) Lot No. A line indicates lead (Pb)-free package or lead (Pb)-free finish. 2004-07-06 ...

Page 2

... di/dt = −200 A/µ 90 90% 10 (off off 2 GT60M322 Min Typ. Max Unit ― ― ±500 nA ― ― 1.0 mA 6.0 ― 9.0 V ― 2.3 2.7 V ― 6800 ― pF ― 0.42 ― ― 0.62 ― µs ― ...

Page 3

... Gate-emitter voltage (sat) 4 Common emitter − Case temperature Tc (°C) 3 GT60M322 – Common emitter Tc = -40° – Common emitter Tc = 125° – ...

Page 4

... Collector current I C (A) Reverse Bias SOA 1000 100 10 1 0.1 3000 1 10 Collector-emitter voltage V CE (V) 4 GT60M322 CE Common emitter MHz C ies Tc = 25°C C oes 100 1000 10000 C Common emitter 600 V Ω ± 25°C ...

Page 5

... 0 Common Collector di/dt = −200 A/µ 25° 125°C 0. Forward current − 125° Forward voltage V F (V) 100 GT60M322 – Common collector 2004-07-06 ...

Page 6

... Unintended Usage of TOSHIBA products listed in this document shall be made at the customer’s own risk. • TOSHIBA products should not be embedded to the downstream products which are prohibited to be produced and sold, under any law and regulations. 6 GT60M322 030619EAA 2004-07-06 ...

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