FDC604

Manufacturer Part NumberFDC604
DescriptionP-Channel 1.8V Specified PowerTrench MOSFET
ManufacturerFairchild Semiconductor
FDC604 datasheet
 


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FDC604P
P-Channel 1.8V Specified PowerTrench
General Description
This
P-Channel
1.8V
specified
Fairchild’s low voltage PowerTrench process. It has
been
optimized
for
battery
power
applications.
Applications
• Battery management
• Load switch
• Battery protection
S
D
D
D
TM
SuperSOT -6
Absolute Maximum Ratings
Symbol
Parameter
V
Drain-Source Voltage
DSS
V
Gate-Source Voltage
GSS
I
Drain Current
– Continuous
D
– Pulsed
P
Maximum Power Dissipation
D
T
, T
Operating and Storage Junction Temperature Range
J
STG
Thermal Characteristics
Thermal Resistance, Junction-to-Ambient
R
θJA
Thermal Resistance, Junction-to-Case
R
θJC
Package Marking and Ordering Information
Device Marking
Device
.604
FDC604P
2000 Fairchild Semiconductor Corporation
   
MOSFET
Features
MOSFET
uses
• –5.5 A, –20 V.
management
• Fast switching speed.
• High performance trench technology for extremely
low R
DS(ON)
G
D
o
T
=25
C unless otherwise noted
A
(Note 1a)
(Note 1a)
(Note 1b)
(Note 1a)
(Note 1)
Reel Size
7’’
June 2000
PRELIMINARY
= 0.033 Ω @ V
R
= –4.5 V
DS(ON)
GS
= 0.043 Ω @ V
R
= –2.5 V
DS(ON)
GS
= 0.060 Ω @ V
R
= –1.8 V
DS(ON)
GS
1
6
2
5
3
4
Ratings
Units
–20
V
±8
V
-5.5
A
-20
1.6
W
0.8
-55 to +150
°C
78
°C/W
30
°C/W
Tape width
Quantity
8mm
3000 units
FDC604P Rev B (W)

FDC604 Summary of contents

  • Page 1

    ... June 2000 PRELIMINARY = 0.033 Ω –4.5 V DS(ON 0.043 Ω –2.5 V DS(ON 0.060 Ω –1.8 V DS(ON Ratings Units –20 V ±8 V -5.5 A -20 1.6 W 0.8 -55 to +150 °C 78 °C/W 30 °C/W Tape width Quantity 8mm 3000 units FDC604P Rev B (W) ...

  • Page 2

    ... Typ Max Units –20 V –12 mV/°C –1 µA 100 nA –100 nA –0.4 –0.7 –1 mV/°C 0.024 0.033 Ω 0.030 0.043 0.042 0.060 – 1926 pF 530 pF 185 144 7.5 nC –1.3 A –0.7 –1.2 V (Note 2) FDC604P Rev B(W) ...

  • Page 3

    ... Figure 6. Body Diode Forward Voltage Variation with Source Current and Temperature. -1.8V -2.0V -2.5V -4. DRAIN CURRENT ( -2 125 GATE TO SOURCE VOLTAGE (V) GS Gate-to-Source Voltage 125 -55 C 0.2 0.4 0.6 0 BODY DIODE FORWARD VOLTAGE (V) SD FDC604P Rev B( 1.2 ...

  • Page 4

    ... SINGLE PULSE TIME (SEC) Power Dissipation θ θ ° θ θ FDC604P Rev B(W) ...

  • Page 5

    ... Pizza Box fo r Standar d Opti on SSOT-6 Tape Leader and Trailer Configuration: Figur e 2.0 Carrier Tape Cover Tape Traile r Tape 300mm mi nimum or 75 empty poc kets 1998 Fairchild Semiconductor Corporation Anti static Cover Tape Embossed F63TNR Carrier Tape Label 631 631 SSOT-6 Unit Orientation ...

  • Page 6

    SuperSOT TM -6 Tape and Reel Data and Package Dimensions, continued SSOT-6 Embossed Carrier Tape Configuration: Figure 3 Pkg type SSOT-6 3.23 3.18 8.0 1.55 +/-0.10 +/-0.10 +/-0.3 +/-0.05 (8mm) Notes: ...

  • Page 7

    ... SuperSOT TM -6 Tape and Reel Data and Package Dimensions, continued SuperSOT -6 (FS PKG Code 31, 33) 1998 Fairchild Semiconductor Corporation 1:1 Scale 1:1 on letter size paper Dimensions shown below are in: inches [millimeters] Part Weight per unit (gram): 0.0158 September 1998, Rev. A ...

  • Page 8

    ... TRADEMARKS The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended exhaustive list of all such trademarks. ACEx™ Bottomless™ CoolFET™ CROSSVOLT™ CMOS FACT™ FACT Quiet Series™ FAST FASTr™ ...