FDC604 Fairchild Semiconductor, FDC604 Datasheet

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FDC604

Manufacturer Part Number
FDC604
Description
P-Channel 1.8V Specified PowerTrench MOSFET
Manufacturer
Fairchild Semiconductor
Datasheet

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FDC604P
P-Channel 1.8V Specified PowerTrench
General Description
This
Fairchild’s low voltage PowerTrench process. It has
been
applications.
Applications
• Battery management
• Load switch
• Battery protection
2000 Fairchild Semiconductor Corporation
Absolute Maximum Ratings
Symbol
V
V
I
P
T
Thermal Characteristics
R
R
Package Marking and Ordering Information
D
J
DSS
GSS
D
θJA
θJC
, T
Device Marking
STG
P-Channel
optimized
.604
SuperSOT -6
Drain-Source Voltage
Gate-Source Voltage
Drain Current
Maximum Power Dissipation
Operating and Storage Junction Temperature Range
Thermal Resistance, Junction-to-Ambient
Thermal Resistance, Junction-to-Case
for
1.8V
D
battery
D
specified
TM
S
– Continuous
– Pulsed
FDC604P
power
Device
Parameter
D
MOSFET
D
management
G
T
A
=25
uses
o
C unless otherwise noted
Reel Size
7’’
(Note 1a)
(Note 1a)
(Note 1b)
(Note 1a)
(Note 1)
   
MOSFET
Features
• –5.5 A, –20 V.
• Fast switching speed.
• High performance trench technology for extremely
low R
DS(ON)
1
2
3
Tape width
-55 to +150
8mm
R
R
R
Ratings
DS(ON)
DS(ON)
DS(ON)
–20
-5.5
-20
1.6
0.8
±8
78
30
= 0.033 Ω @ V
= 0.043 Ω @ V
= 0.060 Ω @ V
PRELIMINARY
6
5
4
June 2000
GS
GS
GS
3000 units
FDC604P Rev B (W)
Quantity
= –4.5 V
= –2.5 V
= –1.8 V
Units
°C/W
°C/W
°C
W
V
V
A

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FDC604 Summary of contents

Page 1

... June 2000 PRELIMINARY = 0.033 Ω –4.5 V DS(ON 0.043 Ω –2.5 V DS(ON 0.060 Ω –1.8 V DS(ON Ratings Units –20 V ±8 V -5.5 A -20 1.6 W 0.8 -55 to +150 °C 78 °C/W 30 °C/W Tape width Quantity 8mm 3000 units FDC604P Rev B (W) ...

Page 2

... Typ Max Units –20 V –12 mV/°C –1 µA 100 nA –100 nA –0.4 –0.7 –1 mV/°C 0.024 0.033 Ω 0.030 0.043 0.042 0.060 – 1926 pF 530 pF 185 144 7.5 nC –1.3 A –0.7 –1.2 V (Note 2) FDC604P Rev B(W) ...

Page 3

... Figure 6. Body Diode Forward Voltage Variation with Source Current and Temperature. -1.8V -2.0V -2.5V -4. DRAIN CURRENT ( -2 125 GATE TO SOURCE VOLTAGE (V) GS Gate-to-Source Voltage 125 -55 C 0.2 0.4 0.6 0 BODY DIODE FORWARD VOLTAGE (V) SD FDC604P Rev B( 1.2 ...

Page 4

... SINGLE PULSE TIME (SEC) Power Dissipation θ θ ° θ θ FDC604P Rev B(W) ...

Page 5

... Pizza Box fo r Standar d Opti on SSOT-6 Tape Leader and Trailer Configuration: Figur e 2.0 Carrier Tape Cover Tape Traile r Tape 300mm mi nimum or 75 empty poc kets 1998 Fairchild Semiconductor Corporation Anti static Cover Tape Embossed F63TNR Carrier Tape Label 631 631 SSOT-6 Unit Orientation ...

Page 6

SuperSOT TM -6 Tape and Reel Data and Package Dimensions, continued SSOT-6 Embossed Carrier Tape Configuration: Figure 3 Pkg type SSOT-6 3.23 3.18 8.0 1.55 +/-0.10 +/-0.10 +/-0.3 +/-0.05 (8mm) Notes: ...

Page 7

... SuperSOT TM -6 Tape and Reel Data and Package Dimensions, continued SuperSOT -6 (FS PKG Code 31, 33) 1998 Fairchild Semiconductor Corporation 1:1 Scale 1:1 on letter size paper Dimensions shown below are in: inches [millimeters] Part Weight per unit (gram): 0.0158 September 1998, Rev. A ...

Page 8

... TRADEMARKS The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended exhaustive list of all such trademarks. ACEx™ Bottomless™ CoolFET™ CROSSVOLT™ CMOS FACT™ FACT Quiet Series™ FAST FASTr™ ...

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