SSM3J112TU Toshiba Semiconductor, SSM3J112TU Datasheet

SSM3J112TU

Manufacturer Part Number

SSM3J112TU

Description

Field-Effect Transistor Silicon P-Channel MOS Type

Manufacturer

Toshiba Semiconductor

Datasheet

1.SSM3J112TU.pdf (6 pages)

Available stocks

Company

Part Number

Manufacturer

Quantity

Price

Company:

Meier Automation Equipment Co., Limited

Part Number:

SSM3J112TU

Manufacturer:

TOSHIBA/东芝

Quantity:

20 000

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High Speed Switching Applications

•

Absolute Maximum Ratings

Electrical Characteristics

Note:

Note 1: Mounted on ceramic board.

Note 2: Mounted on FR4 board.

Note3: Pulse test

4V drive

Low on-resistance:

Drain-Source voltage

Gate-Source voltage

Drain current

Drain power dissipation

Channel temperature

Storage temperature range

Drain-Source breakdown voltage

Drain cut-off current

Gate leakage current

Gate threshold voltage

Forward transfer admittance

Drain-Source on-resistance

Input capacitance

Output capacitance

Reverse transfer capacitance

Switching time

Drain-Source forward voltage

Using continuously under heavy loads (e.g. the application of

high temperature/current/voltage and the significant change in

temperature, etc.) may cause this product to decrease in the

reliability significantly even if the operating conditions (i.e.

operating temperature/current/voltage, etc.) are within the

absolute maximum ratings.

Please design the appropriate reliability upon reviewing the

Toshiba Semiconductor Reliability Handbook (“Handling

Precautions”/“Derating Concept and Methods”) and individual

reliability data (i.e. reliability test report and estimated failure

rate, etc).

(25.4 mm × 25.4 mm × 0.8 mm, Cu Pad: 645 mm

(25.4 mm × 25.4 mm × 1.6 mm, Cu Pad: 645 mm

Characteristic

Turn-on time

Turn-off time

TOSHIBA Field Effect Transistor Silicon P-Channel MOS Type

Pulse

= 790mΩ (max) (@V

= 390mΩ (max) (@V

(Ta = 25°C)

SSM3J112TU

(Ta = 25°C)

Symbol

(BR) DSS

(BR) DSX

Symbol

⏐Y

D (Note 1)

D (Note 2)

DS (ON)

DSS

GSS

DSF

oss

off

GSS

iss

rss

stg

⏐

= −1 mA, V

= −0.5 A, V

= 1.1A, V

= −30 V, V

= −5 V, I

= −15 V, V

−55~150

= ±16V, V

= −15 V, I

= 0~−4 V, R

= −4 V)

= −10 V)

Rating

± 20

−1.1

−2.2

−30

800

500

150

)

Test Conditions

= −0.1 mA

=− 0.5 A

= 0 V

= −0.5 A,

= 0

= +20 V

= −10 V

= −4 V

= 0

= 0, f = 1 MHz

= 10 Ω

Unit

°C

(Note3)

Weight: 6.6 mg (typ.)

JEDEC

JEITA

TOSHIBA

UFM

−0.8

Min

−30

−15

0.5

⎯

1: Gate

2: Source

3: Drain

Typ.

0.85

310

610

1.0

8.5

SSM3J112TU

⎯

2.1±0.1

1.7±0.1

2-2U1A

2007-11-01

―

Max

−1.8

390

790

1.2

−1

±1

⎯

Unit: mm

Unit

mΩ

μA

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