SSM3J304T Toshiba Semiconductor, SSM3J304T Datasheet

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SSM3J304T

Manufacturer Part Number
SSM3J304T
Description
Field-Effect Transistor Silicon P-Channel MOS Type
Manufacturer
Toshiba Semiconductor
Datasheet
1.SSM3J304T.pdf (6 pages)

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www.DataSheet4U.com
○ Power Management Switch Applications
○ High-Speed Switching Applications
•
•
Absolute Maximum Ratings (Ta = 25˚C)
Electrical Characteristics
Note 2: Pulse test
1.8 V drive
Low ON-resistance:
Drain-source voltage
Gate-source voltage
Drain current
Drain power dissipation
Channel temperature
Storage temperature
Note:
Note 1: Mounted on an FR4 board
Drain-source breakdown voltage
Drain cutoff current
Gate leakage current
Gate threshold voltage
Forward transfer admittance
Drain-source ON-resistance
Input capacitance
Output capacitance
Reverse transfer capacitance
Switching time
Drain-source forward voltage
Using continuously under heavy loads (e.g. the application of
high temperature/current/voltage and the significant change in
temperature, etc.) may cause this product to decrease in the
reliability significantly even if the operating conditions (i.e.
operating temperature/current/voltage, etc.) are within the
absolute maximum ratings.
Please design the appropriate reliability upon reviewing the
Toshiba Semiconductor Reliability Handbook (“Handling
Precautions”/“Derating Concept and Methods”) and individual
reliability data (i.e. reliability test report and estimated failure rate, etc).
(25.4 mm × 25.4 mm × 1.6 t, Cu Pad: 645 mm
Characteristic
Characteristic
Turn-on time
Turn-off time
TOSHIBA Field-Effect Transistor Silicon P-Channel MOS Type
R
R
R
on
on
on
= 168 mΩ (max) (@V
= 127 mΩ (max) (@V
= 297 mΩ (max) (@V
Pulse
DC
(Ta = 25°C)
V
V
P
R
SSM3J304T
D
Symbol
Symbol
(BR) DSS
(BR) DSX
⏐Y
V
DS (ON)
I
I
C
C
V
C
GSS
DSS
V
V
t
t
T
DSF
I
T
on
off
(Note 1)
oss
GSS
rss
iss
I
DP
th
fs
DS
stg
D
ch
⏐
I
I
V
V
V
V
I
I
I
V
V
V
I
GS
GS
GS
D
D
D
D
D
D
DS
GS
DS
DS
DS
DD
GS
= -1 mA, V
= -1 mA, V
= -1.0 A, V
= -0.5 A, V
= -0.2 A, V
= 2.3 A, V
= -2.5 V)
= -4.0 V)
= -1.8 V)
= -20 V, V
= ±8 V, V
= -3 V, I
= -3 V, I
= -10 V, V
= -10 V, I
= 0 ~ -2.5 V, R
−55~150
Rating
-2.3
-4.6
700
150
-20
± 8
2
)
1
Test Condition
GS
D
D
GS
GS
GS
GS
GS
D
DS
GS
= -1 mA
= -1 A
GS
= 0
= -1A,
= 0
= +8 V
= -4 V
= -2.5 V
= -1.8 V
= 0
= 0
= 0, f = 1 MHz
G
= 4.7 Ω
Unit
mW
°C
°C
V
V
A
(Note 2)
(Note 2)
(Note 2)
(Note 2)
(Note 2)
Weight: 10 mg (typ.)
JEDEC
JEITA
TOSHIBA
Min
-0.3
-20
-12
2.4
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
Typ.
0.85
120
172
335
⎯
⎯
⎯
⎯
⎯
88
70
56
20
20
4
SSM3J304T
2-3S1A
2007-11-01
―
―
Max
-1.0
127
168
297
-10
1.2
±1
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
Unit: mm
Unit
mΩ
μA
μA
pF
ns
S
V
V
V

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SSM3J304T Summary of contents

Page 1

... oss rss -1A -2 off = 2 DSF SSM3J304T Unit °C °C JEDEC JEITA TOSHIBA Weight (typ.) Min Typ ⎯ - ⎯ - ⎯ ⎯ ⎯ ⎯ ⎯ -0.3 (Note 2) 2 ...

Page 2

... OUT × ( (ON) OUT V DD Equivalent Circuit (top view requires a higher voltage than V GS (on) < V < (off (on). 2 SSM3J304T 0 V 10% 90% 90% 10 for D and V requires a lower th GS (off) ) 2007-11-01 ...

Page 3

... Common Source ℃ -1.2 -1 -0.8 -2 -0.4 -0 SSM3J304T ID - VGS Common Source VDS = - ℃ -25 ℃ ℃ 0 -0.2 -0.4 -0.6 -0.8 -1 -1.2 -1.4 -1.6 -1.8 Gate-Source Voltage VGS (V) RDS (ON Common Source -1.8 V,-0.2 A -2.5 V,-0.5 A VGS = -4 V, -35 - 115 Ambient Temperature Ta ( ℃ ...

Page 4

... Ciss 100 Coss 10 Crss Common Source VGS = MHz ℃ 1 0.01 -10 -100 SSM3J304T IDR - VDS 10 Common Source VGS = ℃ 25 ℃ 1 -25 ℃ ℃ 0 0.2 0.4 0.6 0.8 1 Drain-Source Voltage VDS ( Common Source VDD = -10 V VGS = 0 ～ -2 ℃ ...

Page 5

... Cu Pad : 0 0.001 0.01 0.1 1 Pulse width 1000 ×3) 10 100 1000 ( SSM3J304T P – Mounted on FR4 board (25.4mm × 25.4mm × 1. Pad : 645 Mounted on FR4 board 800 (25.4mm × 25.4mm × 1. Pad : 0.8 mm ×3) a 600 b 400 200 0 ...

Page 6

... Please contact your sales representative for product-by-product details in this document regarding RoHS compatibility. Please use these products in this document in compliance with all applicable laws and regulations that regulate the inclusion or use of controlled substances. Toshiba assumes no liability for damage or losses occurring as a result of noncompliance with applicable laws and regulations. 6 SSM3J304T 20070701-EN GENERAL 2007-11-01 ...

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