AO4700 Alpha & Omega Semiconductors, AO4700 Datasheet

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AO4700

Manufacturer Part Number
AO4700
Description
N-Channel Enhancement Mode Field Effect Transistor
Manufacturer
Alpha & Omega Semiconductors
Datasheet
Absolute Maximum Ratings T
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
Pulsed Drain Current
Schottky reverse voltage
Continuous Forward Current
Pulsed Forward Current
Power Dissipation
Junction and Storage Temperature Range
Parameter: Thermal Characteristics MOSFET
Maximum Junction-to-Ambient
Maximum Junction-to-Ambient
Maximum Junction-to-Lead
Thermal Characteristics Schottky
Maximum Junction-to-Ambient
Maximum Junction-to-Ambient
Maximum Junction-to-Lead
AO4700
N-Channel Enhancement Mode Field Effect Transistor
with Schottky Diode
General Description
The AO4700 uses advanced trench technology to provide
excellent R
provided to facilitate the implementation of a bidirectional
blocking switch, or for non-synchronous DC-DC conversion
applications. Standard Product AO4700 is Pb-free (meets
ROHS & Sony 259 specifications). AO4700L is a Green
Product ordering option. AO4700 and AO4700L are
electrically identical.
A
A
S
G
SOIC-8
DS(ON)
1
2
3
4
8
7
6
5
and low gate charge. A Schottky diode is
K
K
D
D
B
B
A
C
C
A
A
A
A
A
A
=25°C unless otherwise noted
Steady-State
Steady-State
Steady-State
Steady-State
t ≤ 10s
t ≤ 10s
T
T
T
T
T
T
A
A
A
A
A
A
=25°C
=70°C
=25°C
=70°C
=25°C
=70°C
G
Symbol
Symbol
T
D
S
J
R
R
R
R
V
V
V
, T
I
I
P
I
DM
I
FM
GS
θJA
θJL
θJA
θJL
DS
D
KA
F
D
STG
Features
V
I
R
R
SCHOTTKY
V
D
K
A
DS
DS(ON)
DS(ON)
DS
= 6.9A (V
(V) = 30V
(V) = 30V, I
-55 to 150
MOSFET
< 28mΩ (V
< 42mΩ (V
1.28
Typ
±20
6.9
5.8
30
30
48
74
35
44
73
31
2
GS
= 10V)
F
= 4A, V
GS
GS
= 10V)
= 4.5V)
-55 to 150
Schottky
Max
1.28
62.5
62.5
F
110
110
2.6
30
40
40
40
<0.5V@3A
4
2
Units
Units
°C/W
°C/W
°C
W
V
V
A
V
A

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AO4700 Summary of contents

Page 1

... A Schottky diode is DS(ON) provided to facilitate the implementation of a bidirectional blocking switch, or for non-synchronous DC-DC conversion applications. Standard Product AO4700 is Pb-free (meets ROHS & Sony 259 specifications). AO4700L is a Green Product ordering option. AO4700 and AO4700L are electrically identical ...

Page 2

... AO4700 Electrical Characteristics (T =25°C unless otherwise noted) J Symbol Parameter STATIC PARAMETERS BV Drain-Source Breakdown Voltage DSS I Zero Gate Voltage Drain Current DSS I Gate-Body leakage current GSS V Gate Threshold Voltage GS(th state drain current D(ON) R Static Drain-Source On-Resistance DS(ON) g Forward Transconductance FS V Diode Forward Voltage ...

Page 3

... AO4700 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 30 10V 4. 3. (Volts) DS Fig 1: On-Region Characteristics =4. (Amps) D Figure 3: On-Resistance vs. Drain Current and Gate Voltage 25° (Volts) GS Figure 5: On-Resistance vs. Gate-Source Voltage ...

Page 4

... AO4700 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 10 V =15V DS I =6. (nC) g Figure 7: Gate-Charge characteristics 100 R DS(ON) limited 100µs 1ms 10 10ms 0. 10s 0.1 0 (Volts) DS Figure 9: Maximum Forward Biased Safe Operating Area (Note θ ...

Page 5

... AO4700 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS: SCHOTTKY 1.00E+01 125°C 1.00E+00 1.00E-01 1.00E-02 25°C 1.00E-03 0.0 0.2 0.4 V (Volts) F Figure 12: Schottky Forward Characteristics 0.7 0.6 0.5 0.4 I =3A F 0.3 0.2 0 100 Temperature (°C) Figure 14: Schottky Forward Drop vs. Junction Temperature 10 D=T /( off θJA J, =62.5°C/W θ ...

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