AO4703 Alpha & Omega Semiconductors, AO4703 Datasheet

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AO4703

Manufacturer Part Number
AO4703
Description
P-Channel Enhancement Mode Field Effect Transistor
Manufacturer
Alpha & Omega Semiconductors
Datasheet

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
AO4703AL
Manufacturer:
ALPHAOME
Quantity:
1 554
Alpha & Omega Semiconductor, Ltd.
Absolute Maximum Ratings T
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
Pulsed Drain Current
Schottky reverse voltage
Continuous Forward Current
Pulsed Forward Current
Power Dissipation
Junction and Storage Temperature Range
Parameter: Thermal Characteristics MOSFET
Maximum Junction-to-Ambient
Maximum Junction-to-Ambient
Maximum Junction-to-Lead
Thermal Characteristics Schottky
Maximum Junction-to-Ambient
Maximum Junction-to-Ambient
Maximum Junction-to-Lead
AO4703
P-Channel Enhancement Mode Field Effect Transistor
with Schottky Diode
General Description
The AO4703 uses advanced trench technology to
provide excellent R
Schottky diode is provided to facilitate the
implementation of non-synchronous DC-DC
converters. Standard Product AO4703 is Pb-free
(meets ROHS & Sony 259 specifications). AO4703L
is a Green Product ordering option. AO4703 and
AO4703L are electrically identical.
DS(ON)
B
A
S
S
G
B
SOIC-8
A
and low gate charge. A
1
2
3
4
C
C
A
A
A
A
A
8
7
6
5
A
=25°C unless otherwise noted
D/K
D/K
D/K
D/K
Steady-State
Steady-State
Steady-State
Steady-State
t ≤ 10s
t ≤ 10s
T
T
T
T
T
T
A
A
A
A
A
A
=25°C
=70°C
=25°C
=70°C
=25°C
=70°C
Symbol
Symbol
T
Features
V
I
R
R
SCHOTTKY
V
J
R
R
R
R
D
V
V
, T
V
I
I
P
DS
DS(ON)
DS(ON)
DS
I
DM
FM
I
θJA
θJA
GS
θJL
θJL
DS
D
KA
F
= -12A (V
D
G
STG
(V) = -30V
(V) = 30V, I
< 14mΩ (V
< 15mΩ (V
D
S
-55 to 150
MOSFET
GS
Typ
±25
-30
-12
-10
-60
2.1
=- 20V)
28
54
21
F
3
= 3A, V
GS
GS
K
A
=- 20V)
= -10V)
F
=0.5V@1A
-55 to 150
Schottky
Max
4.4
3.2
2.1
30
30
40
75
30
40
75
3
Units
Units
°C/W
°C/W
°C
W
V
V
A
V
A

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AO4703 Summary of contents

Page 1

... The AO4703 uses advanced trench technology to provide excellent R and low gate charge. A DS(ON) Schottky diode is provided to facilitate the implementation of non-synchronous DC-DC converters. Standard Product AO4703 is Pb-free (meets ROHS & Sony 259 specifications). AO4703L is a Green Product ordering option. AO4703 and AO4703L are electrically identical ...

Page 2

... AO4703 Electrical Characteristics (T =25°C unless otherwise noted) J Parameter Symbol STATIC PARAMETERS BV Drain-Source Breakdown Voltage DSS I Zero Gate Voltage Drain Current DSS I Gate-Body leakage current GSS V Gate Threshold Voltage GS(th state drain current D(ON) R Static Drain-Source On-Resistance DS(ON) g Forward Transconductance FS V Diode Forward Voltage ...

Page 3

... AO4703, AO4703L P-CHANNEL: TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 50 -8V -6V -10V -5. (Volts) DS Fig 1: On-Region Characteristics (A) D Figure 3: On-Resistance vs. Drain Current and Gate Voltage 25° (Volts) GS Figure 5: On-Resistance vs. Gate-Source Voltage Alpha & ...

Page 4

... AO4703 P-CHANNEL: TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 10 V =-15V DS I =-12A (nC) g Figure 7: Gate-Charge Characteristics 100.0 T =150°C J(Max) T =25° DS(ON) 10.0 limited 1.0 1s 10s DC 0.1 0 (Volts) DS Figure 9: Maximum Forward Biased Safe Operating Area (Note E) 10 ...

Page 5

... AO4703 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS: SCHOTTKY 10 125°C 1 0.1 0.01 25°C 0.001 0.0 0.2 0.4 0.6 V (Volts) F Figure 12: Schottky Forward Characteristics 0.7 0.6 I 0.5 0.4 I =1A F 0.3 0.2 0 100 Temperature (°C) Figure 14: Schottky Forward Drop vs. Junction Temperature 10 D θJA J, =40°C/W θJA 1 0.1 Single Pulse ...

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