AO4707 Alpha & Omega Semiconductors, AO4707 Datasheet

AO4707

Manufacturer Part Number

AO4707

Description

P-Channel Enhancement Mode Field Effect Transistor

Manufacturer

Alpha & Omega Semiconductors

Datasheets

1.AO8820L.pdf (5 pages)

2.AO4707.pdf (5 pages)

3.AO4707.pdf (5 pages)

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Alpha & Omega Semiconductor, Ltd.

Absolute Maximum Ratings T

Parameter

Drain-Source Voltage

Gate-Source Voltage

Continuous Drain Current

Pulsed Drain Current

Schottky reverse voltage

Continuous Forward Current

Pulsed Forward Current

Power Dissipation

Junction and Storage Temperature Range

Parameter: Thermal Characteristics MOSFET

Maximum Junction-to-Ambient

Maximum Junction-to-Lead

Thermal Characteristics Schottky

Maximum Junction-to-Ambient

Maximum Junction-to-Lead

AO4707

P-Channel Enhancement Mode Field Effect Transistor

with Schottky Diode

General Description

The AO4707 uses advanced trench technology to

provide excellent R

Schottky diode is provided to facilitate the

implementation of non-synchronous DC-DC

converters. Standard Product AO8820 is Pb-free

(meets ROHS & Sony 259 specifications). AO8820L

is a Green Product ordering option. AO8820 and

AO8820L are electrically identical.

DS(ON)

SOIC-8

and low gate charge. A

=25°C unless otherwise noted

D/K

Steady-State

t ≤ 10s

=25°C

=70°C

=25°C

=70°C

=25°C

=70°C

Symbol

Features

SCHOTTKY

, T

DS(ON)

θJA

θJL

θJA

θJL

= -8A (V

STG

(V) = -30V

(V) = 30V, I

< 33mΩ (V

< 56mΩ (V

-55 to 150

MOSFET

= -10V)

Typ

±20

-6.6

-30

-40

-8

= 3A, V

= -10V)

= -4.5V)

<0.52V@3A

-55 to 150

Schottky

Max

3.5

Units

°C/W

°C

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