ECH8601 Sanyo Semicon Device, ECH8601 Datasheet

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ECH8601

Manufacturer Part Number
ECH8601
Description
General-Purpose Switching Device Applications
Manufacturer
Sanyo Semicon Device
Datasheet

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Ordering number : ENN7288B
ECH8601
Features
Specifications
Absolute Maximum Ratings at Ta=25 C
Electrical Characteristics at Ta=25 C
Marking : KC
Drain-to-Source Voltage
Gate-to-Source Voltage
Drain Current (DC)
Drain Current (Pulse)
Allowable Power Dissipation
Total Dissipation
Channel Temperature
Storage Temperature
Drain-to-Source Breakdown Voltage
Zero-Gate Voltage Drain Current
Gate-to-Source Leakage Current
Cutoff Voltage
Forward Transfer Admittance
Static Drain-to-Source On-State Resistance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Low ON-resistance.
Suitable for lithim-ion battery use.
Drain common specification.
2.5V drive.
SANYO assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other
parameters) listed in products specifications of any and all SANYO products described or contained
herein.
Any and all SANYO products described or contained herein do not have specifications that can handle
applications that require extremely high levels of reliability, such as life-support systems, aircraft's
control systems, or other applications whose failure can be reasonably expected to result in serious
physical and/or material damage. Consult with your SANYO representative nearest you before using
any SANYO products described or contained herein in such applications.
Parameter
Parameter
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
SANYO Electric Co.,Ltd. Semiconductor Company
V (BR)DSS
N-Channel Silicon MOSFET
General-Purpose Switching Device
Applications
R DS (on)1
R DS (on)2
R DS (on)3
R DS (on)4
V GS (off)
Symbol
Symbol
V DSS
V GSS
I DSS
I GSS
Coss
Ciss
Crss
Tstg
I DP
Tch
P D
P T
yfs
I D
N1504 TS IM TB-00000096 / 22503 TS IM TA-100363 / O1002 TS IM TA-3673
I D =1mA, V GS =0
V DS =20V, V GS =0
V GS = 8V, V DS =0
V DS =10V, I D =1mA
V DS =10V, I D =3.5A
I D =4A, V GS =4.5V
I D =4A, V GS =4.0V
I D =4A, V GS =3.1V
I D =2A, V GS =2.5V
V DS =10V, f=1MHz
V DS =10V, f=1MHz
V DS =10V, f=1MHz
PW 10 s, duty cycle 1%
Mounted on a ceramic board (900mm
Mounted on a ceramic board (900mm
ECH8601
Conditions
Conditions
2
2
0.8mm)1unit
0.8mm)
min
0.5
7.7
14
15
17
21
20
Ratings
typ
Ratings
910
350
170
17
18
20
24
11
--55 to +150
Continued on next page.
max
150
1.4
1.5
1.3
20
12
40
23
24
30
35
10
7
1
No.7288-1/4
Unit
Unit
m
m
m
m
pF
pF
pF
W
W
V
V
A
A
V
V
S
C
C
A
A

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ECH8601 Summary of contents

Page 1

... SANYO products described or contained herein. SANYO Electric Co.,Ltd. Semiconductor Company TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN ECH8601 N-Channel Silicon MOSFET General-Purpose Switching Device Applications Symbol ...

Page 2

... SANYO : ECH8 Source1 2 : Gate1 3 : Source2 4 : Gate2 5 : Drain2 6 : Drain2 7 : Drain1 8 : Drain1 3 4 Top view Ratings min typ max 15 100 1.3 3.4 0.83 1.2 Switching Time Test Circuit V DD =10V =3. =2.86 D PW= ECH8601 P Unit OUT No.7288-2/4 ...

Page 3

... Drain Current Time -- =10V 100 0.1 Drain Current ECH8601 1. =1.0V 0.6 0.7 0.8 0.9 1.0 1.1 1.2 1.3 1.4 1.5 IT03626 Ta= IT03628 =10V 0.1 10 IT03630 t d (on) ...

Page 4

... Ambient Temperature Note on usage : Since the ECH8601 is a MOSFET product, please avoid using this device in the vicinity of highly charged objects. Specifications of any and all SANYO products described or contained herein stipulate the performance, characteristics, and functions of the described products in the independent state, and are not guarantees of the performance, characteristics, and functions of the described products as mounted in the customer’ ...

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