ZVN4306G Zetex Semiconductors, ZVN4306G Datasheet
ZVN4306G
Manufacturer Part Number
ZVN4306G
Description
N-CHANNEL ENHANCEMENT MODE VERTICAL DMOS FET
Manufacturer
Zetex Semiconductors
Datasheet
1.ZVN4306G.pdf
(2 pages)
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Part Number:
ZVN4306GTA
Manufacturer:
ZETEX/DIODES
Quantity:
20 000
Part Number:
ZVN4306GTC
Manufacturer:
ZETEX/DIODES
Quantity:
20 000
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ZVN4306GVTA
Manufacturer:
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Part Number:
ZVN4306GVTC
Manufacturer:
ZETEX/DIODES
Quantity:
20 000
SOT223 N-CHANNEL ENHANCEMENT
MODE VERTICAL DMOS FET
ISSUE 3 - OCTOBER 1995
FEATURES
*
APPLICATIONS
*
*
PARTMARKING DETAIL -
ABSOLUTE MAXIMUM RATINGS.
ELECTRICAL CHARACTERISTICS (at T
(1) Measured under pulsed conditions. Width=300 s. Duty cycle 2% (2) Sample test.
(3) Switching times measured with 50 source impedance and <5ns rise time on a pulse generator
Spice parameter data is available upon request for this device
PARAMETER
Drain-Source Voltage
Continuous Drain Current at T
Pulsed Drain Current
Gate Source Voltage
Power Dissipation at T
Operating and Storage Temperature Range
PARAMETER
Drain-Source
Breakdown Voltage
Gate-Source Threshold
Voltage
Gate-Body Leakage
Zero Gate Voltage
Drain Current
On-State Drain
Current(1)
Static Drain-Source
On-State Resistance (1)
Forward
Transconductance (1)
Input Capacitance (2)
Common Source
Output Capacitance (2)
Reverse Transfer
Capacitance (2)
Turn-On Delay Time
(2)(3)
Rise Time (2)(3)
Turn-Off Delay Time
(2)(3)
Fall Time (2)(3)
Very low R
DC - DC Converters
Solenoids/Relay Drivers for Automotive
DS(ON)
= .33
amb
SYMBOL MIN.
BV
V
I
I
I
R
g
C
C
C
t
t
t
t
=25°C
GSS
DSS
D(on)
d(on)
r
d(off)
f
fs
GS(th)
DS(on)
iss
oss
rss
DSS
amb
ZVN4306
=25°C
60
1.3
12
0.7
TYP.
0.22
0.32
3 - 411
amb
SYMBOL
V
I
I
V
P
T
D
DM
tot
j
= 25°C unless otherwise stated).
DS
GS
:T
MAX.
3
20
10
100
0.33
0.45
350
140
30
8
25
30
16
stg
UNIT CONDITIONS.
V
V
nA
A
S
pF
pF
pF
ns
ns
ns
ns
A
A
I
I
V
V
V
V
V
V
V
V
V
D
D
-55 to +150
GS
DS
DS
DS
GS
GS
DS
DS
DD
=1mA, V
=1mA, V
VALUE
= 20V, V
=60V, V
=48V, V
=10V, V
=10V, I
=5V, I
=25V,I
=25 V, V
25V, V
2.1
60
15
3
20
ZVN4306G
D
D
D
GS
=1.5A
DS
D
=3A
GS
GS
GS
=3A
GEN
GS
=0V
= V
DS
=0V
=0V, T=125°C
=10V
=0V, f=1MHz
=10V, I
=0V
GS
G
UNIT
D
W
°C
V
A
A
V
=3A
D
(2)
S
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ZVN4306G Summary of contents
Page 1
... P tot stg = 25°C unless otherwise stated). amb TYP. MAX 100 12 0.22 0.33 0.32 0.45 0.7 350 140 411 ZVN4306G D G VALUE UNIT 60 2 -55 to +150 °C UNIT CONDITIONS =1mA =1mA 20V, V =0V ...
Page 2
... ZVN4306G TYPICAL CHARACTERISTICS V GS= 10V 20V 12V Drain Source Voltage (Volts) DS Saturation Characteristics 2.6 2.4 2.2 2.0 1.8 1.6 1.4 1.2 1.0 0.8 Gate Threshold Voltage V 0.6 -50 - 100 T -Junction Temperature (°C) j Normalised R and V DS(on) GS(th) 500 400 300 200 100 ...