HAT1047R Renesas Technology, HAT1047R Datasheet

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HAT1047R

Manufacturer Part Number
HAT1047R
Description
Silicon P Channel Power MOS FET High Speed Power Switching
Manufacturer
Renesas Technology
Datasheet

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DataSheet4U.com
www.DataSheet4U.com
HAT1047R, HAT1047RJ
Silicon P Channel Power MOS FET
High Speed Power Switching
Features
Outline
Rev.5.00, Aug.27.2003, page 1 of 9
For Automotive Application (at Type Code "J")
Low on-resistance
Capable of –4.5 V gate drive
High density mounting
SOP-8
G
4
S S S
1 2 3
D
5 6 7 8
DataSheet4U.com
D D D
8
7
6
5
1, 2, 3
4
5, 6, 7, 8
1 2
3
4
Source
Gate
Drain
(Previous ADE-208-1545D(Z))
REJ03G0074-0500Z
Aug.27.2003
Rev.5.00

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HAT1047R Summary of contents

Page 1

... HAT1047R, HAT1047RJ Silicon P Channel Power MOS FET High Speed Power Switching Features For Automotive Application (at Type Code "J") Low on-resistance Capable of –4.5 V gate drive High density mounting Outline DataSheet4U.com Rev.5.00, Aug.27.2003, page SOP-8 5 DataSheet4U.com ...

Page 2

... Item Drain to source voltage Gate to source voltage Drain current Drain peak current Body-drain diode reverse drain current Avalanche current HAT1047R Avalanche energy Channel dissipation Channel temperature Storage temperature Notes duty cycle 2. When using the glass epoxy board (FR4 1.6 mm Value at Tch = 25° ...

Page 3

... HAT1047R, HAT1047RJ Electrical Characteristics (Ta = 25°C) Item Drain to source breakdown voltage V Gate to source breakdown voltage V Gate to source leak current Zero gate voltage drain current Zero gate voltage drain current Gate to source cutoff voltage Static drain to source on state resistance Forward transfer admittance ...

Page 4

... HAT1047R, HAT1047RJ Main Characteristics Power vs. Temperature Derating 4.0 Test condition. When using the glass epoxy board. (FR4 1.6 mm), (PW 3.0 2.0 1.0 0 Ambient Temperature Typical Output Characteristics -50 -40 -30 -20 - Drain to Source Voltage DataSheet4U.com Rev.5.00, Aug.27.2003, page -500 -100 10s) -0.1 -0.01 50 100 ...

Page 5

... HAT1047R, HAT1047RJ Drain to Source Saturation Voltage vs. Gate to Source Voltage -200 -160 -120 -80 - Gate to Source Voltage Static Drain to Source on State Resistance 40 Pulse Test -4 - -40 0 Case Temperature DataSheet4U.com Rev.5.00, Aug.27.2003, page Static Drain to Source on State Resistance ...

Page 6

... HAT1047R, HAT1047RJ Body-Drain Diode Reverse 500 200 100 Reverse Drain Current Dynamic Input Characteristics 0 - -20 - DataSheet4U.com Rev.5.00, Aug.27.2003, page Recovery Time 100 -10 -20 -50 -100 ...

Page 7

... HAT1047R, HAT1047RJ Reverse Drain Current vs. Source to Drain Voltage -50 -10 V -40 -30 -20 -10 0 -0.4 Source to Drain Voltage Avalanche Test Circuit Vin -15 V DataSheet4U.com Rev.5.00, Aug.27.2003, page - Pulse Test -0.8 -1.2 -1.6 -2.0 V (V) SDF DataSheet4U.com Monitor I AP Monitor ...

Page 8

... HAT1047R, HAT1047RJ 10 1 0.1 0.01 0.001 0.0001 10 Switching Time Test Circuit Vin Monitor Rg Vin -10 V DataSheet4U.com Rev.5.00, Aug.27.2003, page Normalized Transient Thermal Impedance vs. Pulse Width 0.5 100 100 m Pulse Width PW (S) DataSheet4U.com Vout Vin Monitor D.U. -10 V Vout ...

Page 9

... HAT1047R, HAT1047RJ Package Dimensions *Dimension including the plating thickness Base material dimension DataSheet4U.com Rev.5.00, Aug.27.2003, page 4.90 5.3 Max 0.75 Max 1.27 *0.42 ± 0.08 0.40 ± 0.06 0.15 0.25 M DataSheet4U.com As of January, 2003 Unit 0.10 6.10 – 0.30 1.08 0˚ – 8˚ + 0.67 0.60 – 0.20 Package Code FP-8DA JEDEC Conforms JEITA — ...

Page 10

... Renesas Technology Corp. semiconductors are not designed or manufactured for use in a device or system that is used under circumstances in which human life is potentially at stake. Please contact Renesas Technology Corp authorized Renesas Technology Corp. product distributor when considering the use of a product contained herein for any specific purposes, such as apparatus or systems for transportation, vehicular, medical, aerospace, nuclear, or undersea repeater use ...

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