HAT1127H Renesas Technology, HAT1127H Datasheet

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HAT1127H

Manufacturer Part Number
HAT1127H
Description
Silicon P Channel Power MOS FET Power Switching
Manufacturer
Renesas Technology
Datasheet

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Part Number:
HAT1127H-EL
Manufacturer:
RENESAS/瑞萨
Quantity:
20 000
Part Number:
HAT1127H-EL-E
Manufacturer:
RENESAS/瑞萨
Quantity:
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HAT1127H01-EL
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HAT1127H01-EL
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Part Number:
HAT1127H01-EL-E
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www.DataSheet4U.com
HAT1127H
Silicon P Channel Power MOS FET
Power Switching
Features
Outline
Absolute Maximum Ratings
Drain to source voltage
Gate to source voltage
Drain current
Drain peak current
Body-drain diode reverse drain current
Channel dissipation
Channel to Case Thermal Impedance
Channel temperature
Storage temperature
Notes: 1. PW
Rev.5.00 Jan 20, 2006 page 1 of 6
Capable of –4.5 V gate drive
Low drive current
High density mounting
Ultra Low on-resistance
R
DS(on)
2. Tc = 25 C
= 3.6 m typ. (at V
RENESAS Package code: PTZZ0005DA-A
(Package name: LFPAK)
10 s, duty cycle
Item
GS
= –10 V)
1%
5
1 2
3 4
I
D(pulse)
Symbol
Pch
ch-c
V
V
Tstg
Tch
I
DSS
GSS
I
DR
D
Note2
Note2
Note1
G
4
–55 to +150
D
S S S
5
1 2 3
Ratings
–20/+10
–160
4.17
–30
–40
–40
150
30
1, 2, 3
4
5
REJ03G1330-0500
Source
Gate
Drain
Unit
Jan 20, 2006
C/W
W
V
V
A
A
A
C
C
(Ta = 25°C)
Rev.5.00

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HAT1127H Summary of contents

Page 1

... HAT1127H Silicon P Channel Power MOS FET Power Switching Features Capable of –4.5 V gate drive Low drive current www.DataSheet4U.com High density mounting Ultra Low on-resistance R = 3.6 m typ. (at V DS(on) Outline RENESAS Package code: PTZZ0005DA-A (Package name: LFPAK) Absolute Maximum Ratings Item Drain to source voltage ...

Page 2

... HAT1127H Electrical Characteristics Item Drain to source breakdown voltage Gate to source leak current Zero gate voltage drain current Gate to source cutoff voltage Static drain to source on state resistance Forward transfer admittance Input capacitance Output capacitance Reverse transfer capacitance www.DataSheet4U.com Total gate charge Gate to source charge ...

Page 3

... HAT1127H Main Characteristics Power vs. Temperature Derating www.DataSheet4U.com 0 50 Case Temperature Typical Output Characteristics –10 V –4.5 V –50 –40 –30 –20 –10 0 –2 Drain to Source Voltage V Drain to Source Saturation Voltage vs. Gate to Source Voltage –0.20 –0.16 –0.12 –0.08 –0.04 0 –4 Gate to Source Voltage V Rev ...

Page 4

... HAT1127H Static Drain to Source on State Resistance 20 Pulse Test – www.DataSheet4U.com –40 0 Case Temperature Body–Drain Diode Reverse 1000 500 200 100 –0.1 –0.3 Reverse Drain Current I Dynamic Input Characteristics 0 –10 – –30 – – –50 ...

Page 5

... HAT1127H www.DataSheet4U.com 3 1 0.3 0.1 0.03 0.01 10 µ Switching Time Test Circuit Vin Monitor Rg Vin –10 V Rev.5.00 Jan 20, 2006 page Reverse Drain Current vs. Source to Drain Voltage –50 –40 –10 V – –30 –20 –10 0 –0.4 –0.8 –1.2 Source to Drain Voltage V Normalized Transient Thermal Impedance vs. Pulse Width ...

Page 6

... JEITA Package Code LFPAK SC-100 www.DataSheet4U.com Ordering Information Part Name HAT1127H-EL-E Note: For some grades, production may be terminated. Please contact the Renesas sales office to check the state of production before ordering the product. Rev.5.00 Jan 20, 2006 page RENESAS Code Previous Code MASS[Typ ...

Page 7

... Renesas Technology Corp. semiconductors are not designed or manufactured for use in a device or system that is used under circumstances in which human life is potentially at stake. Please contact Renesas Technology Corp authorized Renesas Technology Corp. product distributor when considering the use of a product contained herein for any specific purposes, such as apparatus or systems for transportation, vehicular, medical, aerospace, nuclear, or undersea repeater use ...

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