NTLTD7900ZR2 ON Semiconductor, NTLTD7900ZR2 Datasheet

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NTLTD7900ZR2

Manufacturer Part Number
NTLTD7900ZR2
Description
N-Channel Micro-8 Leadless
Manufacturer
ON Semiconductor
Datasheet

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NTLTD7900ZR2
Power MOSFET
9 A, 20 V, Logic Level, N−Channel
Micro−8 Leadless
contain monolithic back−to−back zener diodes. These zener diodes
provide protection against ESD and unexpected transients. These
miniature surface mount MOSFETs feature ultra low R
logic level performance. EZFET devices are designed for use in low
voltage, high speed switching applications where power efficiency is
important. Typical applications are dc−dc converters, and power
management in portable and battery powered products such as
computers, printers, cellular and cordless phones.
Applications
Maximum ratings are those values beyond which device damage can occur.
Maximum ratings applied to the device are individual stress limit values (not
normal operating conditions) and are not valid simultaneously. If these limits are
exceeded, device functional operation is not implied, damage may occur and
reliability may be affected.
1. When surface mounted to 1 x 1 FR−4 board.
August, 2004 − Rev. 4
MAXIMUM RATINGS
Drain−to−Source Voltage
Gate−to−Source Voltage
Continuous Drain Current (Note 1)
Pulsed Drain Current
Continuous Source−Diode
Total Power Dissipation (Note 1)
Operating Junction and Storage
Thermal Resistance (Note 1)
EZFETs
Life
Zener Protected Gates Provide Electrostatic Discharge Protection
Designed to Withstand 4000 V Human Body Model
Ultra Low R
Logic Level Gate Drive − Can be Driven by Logic ICs
Micro−8 Leadless Surface Mount Package − Saves Board Space
I
Semiconductor Components Industries, LLC, 2004
DSS
T
T
(tp v 10 ms)
Conduction (Note 1)
T
T
Temperature Range
Junction−to−Ambient
A
A
A
A
= 25 C
= 85 C
= 25 C
= 85 C
Specified at Elevated Temperature
Rating
are an advanced series of Power MOSFETs which
DS(on)
Provides Higher Efficiency and Extends Battery
(T
J
= 25 C unless otherwise noted)
Symbol
T
V
R
J
V
I
P
DSS
DM
, T
I
I
qJA
GS
D
s
D
stg
10 Secs
9.0
6.4
2.9
3.2
1.7
38
−55 to 150
20
30
12
Steady
DS(on)
State
0.79
6.0
4.3
1.4
1.5
82
1
and true
Unit
C/W
W
V
V
A
A
A
C
†For information on tape and reel specifications,
G
NTLTD7900ZR2
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specification
Brochure, BRD8011/D.
1
Micro−8 Leadless
N−Channel
CASE 846C
Device
2.4 kW
(V
(V
Drain
Drain
Drain
Drain
1
ORDERING INFORMATION
GS
GS
A
Y
WW
R
R
http://onsemi.com
DS(on)
DS(on)
= 4.5 V, I
= 2.5 V, I
PIN ASSIGNMENT
9 AMPERES
8
7
6
5
20 VOLTS
(Bottom View)
Micro−8 LL 2500 Tape & Reel
D
S
= Assembly Location
= Year
= Work Week
Package
1
Drain
= 26 mW
= 31 mW
Publication Order Number:
MARKING DIAGRAM
G
2
D
D
1
= 6.5 A)
= 5.8 A)
N−Channel
NTLTD7900ZR2/D
2.4 kW
1
2
3
4
AYWW
7900
Source 1
Gate 1
Source 2
Gate 2
Shipping
D
S
2

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NTLTD7900ZR2 Summary of contents

Page 1

... View) ORDERING INFORMATION Device Package Shipping NTLTD7900ZR2 Micro−8 LL 2500 Tape & Reel †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specification Brochure, BRD8011/D. Publication Order Number: NTLTD7900ZR2 † ...

Page 2

... Turn−Off Delay Time Fall Time Gate Charge Gate Charge SOURCE−DRAIN DIODE CHARACTERISTICS Forward On−Voltage Pulse Test: Pulse Width S 300 ms, Duty Cycle S 2%. 3. Switching characteristics are independent of operating junction temperatures. NTLTD7900ZR2 ( unless otherwise noted) J Symbol Vdc, V ...

Page 3

... DRAIN−TO−SOURCE VOLTAGE (V) DS Figure 3. On−Region Characteristics 0.06 0.05 0.04 0.03 0.02 0. Figure 5. On−Resistance versus Drain Current NTLTD7900ZR2 10,000 1000 100 10 1 0.1 0. GATE−TO−SOURCE VOLTAGE (V) GS Figure 2. Gate−Current versus Gate−Source ...

Page 4

... GSP 1200 1000 800 600 400 200 0 NTLTD7900ZR2 POWER MOSFET SWITCHING The capacitance (C a voltage corresponding to the off−state condition when calculating t on−state when calculating t At high switching speeds, parasitic circuit elements complicate the analysis. The inductance of the MOSFET source lead, inside the package and in the circuit wiring ...

Page 5

... V , SOURCE−TO−DRAIN VOLTAGE (V) SD Figure 9. Diode Forward Voltage versus Current 0.2 0.1 0 −0.1 −0.2 −0.3 −0.4 −50 − JUNCTION TEMPERATURE ( C) J Figure 11. Threshold Voltage NTLTD7900ZR2 10,000 d(off) t 1000 t d( 100 Figure 8. Resistive Switching Time Variation 1 ...

Page 6

... D = 0.5 0.2 0.1 0.1 0.05 0.02 SINGLE PULSE 0.01 10−4 10−3 10−2 NTLTD7900ZR2 P (pk DUTY CYCLE 10− TIME (seconds) Figure 13. Thermal Response http://onsemi.com 6 R (t) = r(t) R qJC qJC D CURVES APPLY FOR POWER PULSE TRAIN SHOWN READ TIME − (t) /t qJC ...

Page 7

... DETAIL VIEW AA−AA NTLTD7900ZR2 PACKAGE DIMENSIONS Micro−8 Leadless CASE 846C−01 ISSUE O SEATING −T− PLANE 0. 0. SIDE VIEW ...

Page 8

... USA/Canada Japan: ON Semiconductor, Japan Customer Focus Center 2−9−1 Kamimeguro, Meguro−ku, Tokyo, Japan 153−0051 Phone: 81−3−5773−3850 http://onsemi.com 8 ON Semiconductor Website: http://onsemi.com Order Literature: http://www.onsemi.com/litorder For additional information, please contact your local Sales Representative. NTLTD7900ZR2/D ...

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