NTMD6P02R2 ON Semiconductor, NTMD6P02R2 Datasheet

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NTMD6P02R2

Manufacturer Part Number
NTMD6P02R2
Description
Power MOSFET
Manufacturer
ON Semiconductor
Datasheet

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NTMD6P02R2
Manufacturer:
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Quantity:
20 000
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Quantity:
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Part Number:
NTMD6P02R2G
Quantity:
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Company:
Part Number:
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Quantity:
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P–Channel SO–8, Dual
Features
Applications
1. Mounted onto a 2 square FR–4 Board (1 sq. 2 oz. Cu 0.06 thick single
2. Mounted onto a 2 square FR–4 Board (1 sq. 2 oz. Cu 0.06 thick single
3. Minimum FR–4 or G–10 PCB, t = steady state.
4. Pulse Test: Pulse Width = 300 ms, Duty Cycle = 2%.
MAXIMUM RATINGS
November, 2000 – Rev. 1
Drain–to–Source Voltage
Gate–to–Source Voltage – Continuous
Thermal Resistance –
Thermal Resistance –
Thermal Resistance –
Cellular and Cordless Telephones and PCMCIA Cards
Ultra Low R DS(on)
Higher Efficiency Extending Battery Life
Logic Level Gate Drive
Miniature Dual SO–8 Surface Mount Package
Diode Exhibits High Speed, Soft Recovery
Avalanche Energy Specified
SO–8 Mounting Information Provided
Power Management in Portable and Battery–Powered Products, i.e.:
Semiconductor Components Industries, LLC, 2000
sided), t = 10 seconds.
sided), t = steady state.
Junction–to–Ambient (Note 1.)
Total Power Dissipation @ T A = 25 C
Continuous Drain Current @ T A = 25 C
Continuous Drain Current @ T A = 70 C
Maximum Operating Power Dissipation
Maximum Operating Drain Current
Pulsed Drain Current (Note 4.)
Junction–to–Ambient (Note 2.)
Total Power Dissipation @ T A = 25 C
Continuous Drain Current @ T A = 25 C
Continuous Drain Current @ T A = 70 C
Maximum Operating Power Dissipation
Maximum Operating Drain Current
Pulsed Drain Current (Note 4.)
Junction–to–Ambient (Note 3.)
Total Power Dissipation @ T A = 25 C
Continuous Drain Current @ T A = 25 C
Continuous Drain Current @ T A = 70 C
Maximum Operating Power Dissipation
Maximum Operating Drain Current
Pulsed Drain Current (Note 4.)
Rating
(T J = 25 C unless otherwise noted)
Preferred Device
Symbol
V DSS
R JA
R JA
R JA
V GS
I DM
I DM
I DM
P D
P D
P D
P D
P D
P D
I D
I D
I D
I D
I D
I D
I D
I D
I D
Value
–3.89
–3.01
–2.48
"12
62.5
–7.8
–5.7
1.28
–6.2
–4.6
0.75
–4.8
–3.5
–20
–40
–35
166
–30
2.0
0.5
0.3
0.2
98
1
Unit
C/W
C/W
C/W
W
W
W
W
W
W
V
V
A
A
A
A
A
A
A
A
A
A
A
A
Preferred devices are recommended choices for future use
and best overall value.
8
NTMD6P02R2
Device
Source–1
Source–2
Gate–1
Gate–2
ORDERING INFORMATION
1
R DS(on) = 33 mW
L
Y
WW
http://onsemi.com
G
PIN ASSIGNMENT
6 AMPERES
20 VOLTS
SO–8, Dual
CASE 751
STYLE 11
= Location Code
= Year
= Work Week
Package
Top View
P–Channel
SO–8
2
3
4
1
Publication Order Number:
D
8
7
6
5
S
2500 Tape & Reel
NTMD6P02R2/D
Drain–1
Drain–1
Drain–2
Drain–2
Shipping
MARKING
DIAGRAM
E6P02
LYWW

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NTMD6P02R2 Summary of contents

Page 1

... Year WW = Work Week PIN ASSIGNMENT Source–1 Drain– Gate– Drain–1 Source–2 Drain– Gate–2 Drain–2 Top View ORDERING INFORMATION Device Package Shipping SO–8 2500 Tape & Reel Publication Order Number: NTMD6P02R2/D ...

Page 2

... Total Gate Charge Gate–Source Charge Gate–Drain Charge 5. Indicates Pulse Test: Pulse Width = 300 s max, Duty Cycle = 2%. 6. Switching characteristics are independent of operating junction temperature. * Handling precautions to protect against electrostatic discharge is mandatory. NTMD6P02R2 Rating ( unless otherwise noted) * Symbol V (BR)DSS V GS(th) R DS(on – ...

Page 3

... GS , GATE–TO–SOURCE VOLTAGE (VOLTS) Figure 3. On–Resistance versus Gate–To–Source Voltage NTMD6P02R2 Symbol ( –1.7 Adc Vdc –6.2 Adc Vdc –1.7 Adc Vdc /dt = 100 /dt = 100 A/ s) ...

Page 4

... GATE–TO–SOURCE OR DRAIN–TO–SOURCE VOLTAGE (VOLTS) Figure 7. Capacitance Variation 1000 – –1 –10 V 100 GATE RESISTANCE (OHMS) Figure 9. Resistive Switching Time Variation versus Gate Resistance NTMD6P02R2 1000 100 10 1 0.1 0.01 75 100 125 150 4 – ...

Page 5

... I S Figure 13. Diode Reverse Recovery Waveform TYPICAL ELECTRICAL CHARACTERISTICS 0.5 0.2 0.1 0.1 0.05 0.02 0.01 0.01 SINGLE PULSE 0.001 1.0E–05 1.0E–04 1.0E–03 NTMD6P02R2 100 2.5 V SINGLE PULSE DS(on) LIMIT THERMAL LIMIT PACKAGE LIMIT 0.1 0.1 1.0 1.2 – DRAIN–TO–SOURCE VOLTAGE (VOLTS) Figure 12. Maximum Rated Forward Biased di/ ...

Page 6

... When using infrared heating with the reflow soldering method, the difference shall be a maximum NTMD6P02R2 interface between the board and the package. With the correct pad geometry, the packages will self–align when subjected to a solder reflow process. ...

Page 7

... C 100 C 100 TIME ( MINUTES TOTAL) NTMD6P02R2 TYPICAL SOLDER HEATING PROFILE temperature versus time. The line on the graph shows the actual temperature that might be experienced on the surface of a test board at or near a central solder joint. The two profiles are based on a high density and a low density board ...

Page 8

... JAPAN: ON Semiconductor, Japan Customer Focus Center 4–32–1 Nishi–Gotanda, Shinagawa–ku, Tokyo, Japan 141–0031 Phone: 81–3–5740–2700 Email: r14525@onsemi.com ON Semiconductor Website: http://onsemi.com For additional information, please contact your local Sales Representative. http://onsemi.com then Dial 866–297–9322 NTMD6P02R2/D ...

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