NTMFS4834N ON Semiconductor, NTMFS4834N Datasheet

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NTMFS4834N

Manufacturer Part Number
NTMFS4834N
Description
Power MOSFET
Manufacturer
ON Semiconductor
Datasheet

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NTMFS4834NT1G
Manufacturer:
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Quantity:
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Quantity:
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www.DataSheet4U.com
NTMFS4834N
Power MOSFET
30 V, 130 A, Single N−Channel, SO−8 FL
Features
Applications
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
1. Surface−mounted on FR4 board using 1 sq−in pad, 1 oz Cu.
2. Surface−mounted on FR4 board using the minimum recommended pad size.
*For additional information on our Pb−Free strategy and soldering details, please
© Semiconductor Components Industries, LLC, 2006
July, 2006 − Rev. 0
download the ON Semiconductor Soldering and Mounting Techniques
Reference Manual, SOLDERRM/D.
MAXIMUM RATINGS
Drain−to−Source Voltage
Gate−to−Source Voltage
Continuous Drain
Current R
(Note 1)
Power Dissipation
R
Continuous Drain
Current R
(Note 2)
Power Dissipation
R
Continuous Drain
Current R
(Note 1)
Power Dissipation
R
Pulsed Drain
Current
Operating Junction and Storage
Temperature
Source Current (Body Diode)
Drain to Source DV/DT
Single Pulse Drain−to−Source Avalanche
Energy (T
I
Lead Temperature for Soldering Purposes
(1/8” from case for 10 s)
L
Low R
Low Capacitance to Minimize Driver Losses
Optimized Gate Charge to Minimize Switching Losses
These are Pb−Free Devices*
CPU Power Delivery
DC−DC Converters
Low Side Switching
qJA
qJA
qJC
= 32 A
(Note 1)
(Note 2)
(Note 1)
pk
DS(on)
qJA
qJA
qJC
J
, L = 1.0 mH, R
= 25°C, V
to Minimize Conduction Losses
Parameter
DD
Steady
State
= 30 V, V
(T
G
J
= 25 W)
T
t
= 25°C unless otherwise stated)
p
A
= 10 ms
= 25°C,
T
T
T
T
T
T
T
T
T
GS
A
A
A
A
A
A
C
C
C
= 25°C
= 85°C
= 25°C
= 25°C
= 85°C
= 25°C
= 25°C
= 85°C
= 25°C
= 10 V,
T
Symbol
J
dV/dt
V
EAS
V
, T
I
P
P
P
ID
T
DSS
I
I
DM
I
GS
D
D
S
D
D
D
L
STG
−55 to
Value
+150
2.31
86.2
130
260
512
260
9.5
0.9
30
20
21
15
13
93
71
6
1
V/ns
Unit
mJ
°C
°C
W
W
W
V
V
A
A
A
A
A
†For information on tape and reel specifications,
NTMFS4834NT1G
NTMFS4834NT3G
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specification
Brochure, BRD8011/D.
V
(BR)DSS
30 V
A
Y
WW
G
(Note: Microdot may be in either location)
SO−8 FLAT LEAD
Device
CASE 488AA
G (4)
ORDERING INFORMATION
STYLE 1
N−CHANNEL MOSFET
= Assembly Location
= Year
= Work Week
= Pb−Free Package
http://onsemi.com
1
4.0 mW @ 4.5 V
3.0 mW @ 10 V
D (5,6)
R
DS(ON)
(Pb−Free)
(Pb−Free)
Package
SO−8 FL
SO−8 FL
Publication Order Number:
MAX
S (1,2,3)
S
S
S
G
1500 Tape / Reel
5000 Tape / Reel
NTMFS4834N/D
MARKING
DIAGRAM
AYWWG
Shipping
4834N
D
D
I
D
G
130 A
MAX
D
D

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NTMFS4834N Summary of contents

Page 1

... NTMFS4834NT1G SO−8 FL 1500 Tape / Reel (Pb−Free) NTMFS4834NT3G SO−8 FL 5000 Tape / Reel (Pb−Free) †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specification Brochure, BRD8011/D. Publication Order Number: NTMFS4834N/D MAX D D † ...

Page 2

... Rise Time Turn−Off Delay Time Fall Time Turn−On Delay Time Rise Time Turn−Off Delay Time Fall Time 5. Pulse Test: pulse width v 300 ms, duty cycle v 2%. 6. Switching characteristics are independent of operating junction temperatures. NTMFS4834N Symbol R qJC R qJA R qJA (T = 25°C unless otherwise specified) ...

Page 3

... Reverse Recovery Charge PACKAGE PARASITIC VALUES Source Inductance Drain Inductance Gate Inductance www.DataSheet4U.com Gate Resistance 5. Pulse Test: pulse width v 300 ms, duty cycle v 2%. 6. Switching characteristics are independent of operating junction temperatures. NTMFS4834N (T = 25°C unless otherwise specified) J Symbol Test Condition ...

Page 4

... GATE−TO−SOURCE VOLTAGE (VOLTS) GS Figure 3. On−Resistance vs. Gate−to−Source 2 1.5 1.0 0.5 0 −50 − JUNCTION TEMPERATURE (°C) J Figure 5. On−Resistance Variation with Temperature NTMFS4834N TYPICAL PERFORMANCE CURVES 200 180 4 25°C J 160 4.0 V 140 120 3.8 V 100 ...

Page 5

... V GS SINGLE PULSE T = 25° LIMIT DS(on) THERMAL LIMIT PACKAGE LIMIT 0.1 0 DRAIN−TO−SOURCE VOLTAGE (VOLTS) DS Figure 11. Maximum Rated Forward Biased Safe Operating Area NTMFS4834N TYPICAL PERFORMANCE CURVES 25° iss 6 4 oss ...

Page 6

... M 3.00 3. −−− SOLDERING FOOTPRINT 1.270 0.750 0.965 1.330 2X 0.905 2X 0.495 3.200 0.475 2X 1.530 4.560 ON Semiconductor Website: www.onsemi.com Order Literature: http://www.onsemi.com/orderlit For additional information, please contact your local Sales Representative NTMFS4834N/D 1.20 0.05 0.51 0.33 5.10 4.22 6.10 4.30 0.71 −−− 0.71 0.20 3. 1.000 4.530 ...

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