NTMFS4841N ON Semiconductor, NTMFS4841N Datasheet

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NTMFS4841N

Manufacturer Part Number
NTMFS4841N
Description
Power MOSFET
Manufacturer
ON Semiconductor
Datasheet

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www.DataSheet4U.com
NTMFS4841N
Power MOSFET
30 V, 57 A, Single N−Channel, SO−8 FL
Features
Applications
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
*For additional information on our Pb−Free strategy and soldering details, please
© Semiconductor Components Industries, LLC, 2006
May, 2006 − Rev. 0
download the ON Semiconductor Soldering and Mounting Techniques
Reference Manual, SOLDERRM/D.
MAXIMUM RATINGS
Drain−to−Source Voltage
Gate−to−Source Voltage
Continuous Drain
Current R
(Note 1)
Power Dissipation
R
Continuous Drain
Current R
(Note 2)
Power Dissipation
R
Continuous Drain
Current R
(Note 1)
Power Dissipation
R
Pulsed Drain
Current
Operating Junction and Storage
Temperature
Source Current (Body Diode)
Drain to Source dV/dt
Single Pulse Drain−to−Source Avalanche
Energy (V
I
Lead Temperature for Soldering Purposes
(1/8” from case for 10 s)
L
Low R
Low Capacitance to Minimize Driver Losses
Optimized Gate Charge to Minimize Switching Losses
These are Pb−Free Device
CPU Power Delivery
DC−DC Converters
qJA
qJA
qJC
= 19 A
(Note 1)
(Note 2)
(Note 1)
DS(on)
pk
qJA
qJA
qJC
DD
, L = 1.0 mH, R
= 30 V, V
to Minimize Conduction Losses
Parameter
t
GS
Steady
p
State
=10ms
(T
= 10 V,
G
J
= 25 W)
= 25°C unless otherwise stated)
T
T
T
T
T
T
T
T
T
T
A
A
A
A
A
A
C
C
C
A
= 25°C
= 85°C
= 25°C
= 25°C
= 85°C
= 25°C
= 25°C
= 25°C
= 85°C
= 25°C
Symbol
V
T
dV/dt
EAS
V
I
P
P
P
T
DSS
ID
STG
T
I
I
DM
I
GS
D
D
S
J
D
D
D
L
,
−55 to
Value
+150
13.1
2.17
0.87
41.7
115
180
260
9.5
8.3
30
20
57
41
35
6
6
1
Unit
V/ns
mJ
°C
°C
W
W
W
V
V
A
A
A
A
A
†For information on tape and reel specifications,
NTMFS4841NT1G
NTMFS4841NT3G
SO−8 FLAT LEAD
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
V
CASE 488AA
(BR)DSS
30 V
STYLE 1
Device
A
Y
WW
G
(Note: Microdot may be in either location)
G (4)
ORDERING INFORMATION
1
N−CHANNEL MOSFET
http://onsemi.com
= Assembly Location
= Year
= Work Week
= Pb−Free Package
11.4 mW @ 4.5 V
7.0 mW @ 10 V
D (5,6)
R
DS(ON)
(Pb−Free)
(Pb−Free)
Package
SO−8FL
SO−8FL
Publication Order Number:
MAX
S (1,2,3)
G
S
S
S
MARKING
DIAGRAM
AYWWG
NTMFS4841N/D
4841N
D
D
Tape & Reel
Tape & Reel
Shipping
G
1500 /
5000 /
I
D
57 A
MAX
D
D

Related parts for NTMFS4841N

NTMFS4841N Summary of contents

Page 1

... Tape & Reel NTMFS4841NT3G SO−8FL 5000 / (Pb−Free) Tape & Reel †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. Publication Order Number: NTMFS4841N/D MAX D D † ...

Page 2

... Turn−Off Delay Time Fall Time Turn−On Delay Time Rise Time Turn−Off Delay Time Fall Time 3. Pulse Test: pulse width v 300 ms, duty cycle v 2%. 4. Switching characteristics are independent of operating junction temperatures. NTMFS4841N Parameter (T = 25°C unless otherwise specified) J Symbol Test Condition V ...

Page 3

... Reverse Recovery Charge PACKAGE PARASITIC VALUES Source Inductance Drain Inductance Gate Inductance www.DataSheet4U.com Gate Resistance 3. Pulse Test: pulse width v 300 ms, duty cycle v 2%. 4. Switching characteristics are independent of operating junction temperatures. NTMFS4841N (T = 25°C unless otherwise specified) J Symbol Test Condition ...

Page 4

... Figure 3. On−Resistance vs. Gate−to−Source 1.8 1 1.6 GS 1.5 1.4 1.3 1.2 1.1 1.0 0.9 0.8 0.7 0.6 −55 −35 − JUNCTION TEMPERATURE (°C) J Figure 5. On−Resistance Variation with Temperature NTMFS4841N TYPICAL PERFORMANCE CURVES 140 T = 25°C 130 J 120 110 GS 100 ...

Page 5

... SINGLE PULSE 25° LIMIT DS(on) THERMAL LIMIT PACKAGE LIMIT 1 0 DRAIN−TO−SOURCE VOLTAGE (VOLTS) DS Figure 11. Maximum Rated Forward Biased Safe Operating Area NTMFS4841N TYPICAL PERFORMANCE CURVES 25° iss oss ...

Page 6

... Single Pulse 0.001 1E−04 1E−03 NTMFS4841N TYPICAL PERFORMANCE CURVES 100 100°C 125° 100 PULSE WIDTH (ms) Figure 13. EAS vs. Pulse Width Normalized to R 0.0086 Ω 0.026 Ω 0.078 Ω 0.00004 0.0002 0.0006 1E−02 1E−01 t, time (s) Figure 14. FET Thermal Response http://onsemi ...

Page 7

... BSC G 0.51 0. 0.51 −−− L 0.51 0.61 SEATING L1 0.05 0.17 PLANE M 3.00 3. −−− STYLE 1: PIN 1. SOURCE 2. SOURCE 3. SOURCE 4. GATE 5. DRAIN 6. DRAIN ON Semiconductor Website: www.onsemi.com Order Literature: http://www.onsemi.com/orderlit For additional information, please contact your local Sales Representative NTMFS4841N/D 1.20 0.05 0.51 0.33 5.10 4.22 6.10 4.30 0.71 −−− 0.71 0.20 3. ...

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