NTMFS4946N ON Semiconductor, NTMFS4946N Datasheet

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NTMFS4946N

Manufacturer Part Number
NTMFS4946N
Description
Power MOSFET
Manufacturer
ON Semiconductor
Datasheet
1.NTMFS4946N.pdf (6 pages)

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Company:
BOSTOCK HK LIMITED BOSTOCK HK LIMITED
Part Number:
NTMFS4946NT1G
Manufacturer:
ON
Quantity:
8 000
Company:
Meier Automation Equipment Co., Limited Meier Automation Equipment Co., Limited
Part Number:
NTMFS4946NT1G
Manufacturer:
ON/安森美
Quantity:
20 000
NTMFS4946N
Power MOSFET
30 V, 100 A, Single N−Channel, SO−8 FL
Features
•
•
•
•
•
Applications
•
•
•
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
© Semiconductor Components Industries, LLC, 2008
November, 2008 − Rev. 1
MAXIMUM RATINGS
Drain−to−Source Voltage
Gate−to−Source Voltage
Continuous Drain
Current R
(Note 1)
Power Dissipation
R
Continuous Drain
Current R
10 sec
Power Dissipation
R
Continuous Drain
Current R
(Note 2)
Power Dissipation
R
Continuous Drain
Current R
(Note 1)
Power Dissipation
R
Pulsed Drain
Current
Current limited by package
Operating Junction and Storage
Temperature
Source Current (Body Diode)
Drain to Source dV/dt
Single Pulse Drain−to−Source Avalanche
Energy (V
I
Lead Temperature for Soldering Purposes
(1/8” from case for 10 s)
L
Low R
Low Capacitance to Minimize Driver Losses
Optimized Gate Charge to Minimize Switching Losses
Thermally Enhanced SO8 Package
These are Pb−Free Device
CPU Power Delivery
DC−DC Converters
Low Side Switching
qJA
qJA,
qJA
qJC
= 37 A
(Note 1)
(Note 2)
(Note 1)
t v 10 sec
DS(on)
pk
qJA
qJA
qJA
qJC
DD
, L = 0.3 mH, R
= 50 V, V
v
to Minimize Conduction Losses
Parameter
t
GS
Steady
p
State
=10ms
(T
= 10 V,
G
J
= 25 W)
= 25°C unless otherwise stated)
T
T
T
T
T
T
T
T
T
T
T
T
T
T
A
A
A
A
A
A
A
A
A
C
C
C
A
A
= 25°C
= 85°C
= 25°C
= 25°C
= 85°C
= 25°C
= 25°C
= 25°C
= 25°C
= 85°C
= 25°C
= 25°C
= 85°C
= 25°C
Symbol
I
Dmaxpkg
V
T
dV/dt
EAS
V
I
P
P
P
P
T
DSS
STG
T
I
I
I
I
DM
I
GS
D
D
D
D
S
J
D
D
D
D
L
,
−55 to
Value
+150
20.3
14.6
2.25
32.8
23.7
5.90
12.7
0.89
55.5
±20
100
200
100
205
260
9.2
30
72
55
6
1
Unit
V/ns
mJ
°C
°C
W
W
W
W
V
V
A
A
A
A
A
A
A
*For additional information on our Pb−Free strategy
†For information on tape and reel specifications,
NTMFS4946NT1G
NTMFS4946NT3G
and soldering details, please download the ON
Semiconductor Soldering and Mounting Techniques
Reference Manual, SOLDERRM/D.
SO−8 FLAT LEAD
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
V
CASE 488AA
(BR)DSS
(Note: Microdot may be in either location)
30 V
STYLE 1
Device
G (4)
ORDERING INFORMATION
A
Y
WW
G
1
N−CHANNEL MOSFET
http://onsemi.com
5.1 mW @ 4.5 V
3.4 mW @ 10 V
D (5,6)
R
= Assembly Location
= Year
= Work Week
= Pb−Free Package
DS(ON)
(Pb−Free)
(Pb−Free)
Package
SO−8FL
SO−8FL
Publication Order Number:
MAX
S (1,2,3)
G
S
S
S
MARKING
DIAGRAM
www.DataSheet4U.com
AYWWG
NTMFS4946N/D
4946N
D
D
Tape & Reel
Tape & Reel
Shipping
G
1500 /
5000 /
I
D
100 A
MAX
D
†
D

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NTMFS4946N Summary of contents

Page 1

... S (1,2,3) N−CHANNEL MOSFET MARKING DIAGRAM 4946N S AYWWG Assembly Location Y = Year WW = Work Week G = Pb−Free Package ORDERING INFORMATION † Package Shipping SO−8FL 1500 / (Pb−Free) Tape & Reel SO−8FL 5000 / (Pb−Free) Tape & Reel Publication Order Number: NTMFS4946N/D ...

Page 2

THERMAL RESISTANCE MAXIMUM RATINGS Parameter Junction−to−Case (Drain) Junction−to−Ambient – Steady State (Note 1) Junction−to−Ambient – Steady State (Note 2) Junction−to−Ambient − sec 1. Surface−mounted on FR4 board using 1 sq−in pad Cu. 2. Surface−mounted on ...

Page 3

ELECTRICAL CHARACTERISTICS Parameter SWITCHING CHARACTERISTICS (Note 4) Turn−On Delay Time Rise Time Turn−Off Delay Time Fall Time DRAIN−SOURCE DIODE CHARACTERISTICS Forward Diode Voltage Reverse Recovery Time Charge Time Discharge Time Reverse Recovery Charge PACKAGE PARASITIC VALUES Source Inductance Drain Inductance ...

Page 4

V , GATE−TO−SOURCE VOLTAGE (V) GS Figure 3. On−Resistance vs. Gate−to−Source Voltage 1. 1. 1.25 1.00 ...

Page 5

11 100 t d(off GATE RESISTANCE (W) G Figure 9. Resistive Switching Time Variation vs. Gate Resistance 1000 ...

Page 6

... L 0.51 0.61 0.71 L1 0.05 0.17 0.20 M 3.00 3.40 3. −−− 12 SOLDERING FOOTPRINT 1.270 0.750 4X 1.000 0.965 2X 0.905 2X 4.530 0.475 2X 1.530 4.560 ON Semiconductor Website: www.onsemi.com Order Literature: http://www.onsemi.com/orderlit For additional information, please contact your local Sales Representative NTMFS4946N/D ...

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