BTS426L1E3043 Infineon Technologies AG, BTS426L1E3043 Datasheet

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BTS426L1E3043

Manufacturer Part Number
BTS426L1E3043
Description
Smart Highside Power Switch
Manufacturer
Infineon Technologies AG
Datasheet
Smart Highside Power Switch
Features
Application
General Description
N channel vertical power FET with charge pump, ground referenced CMOS compatible input and diagnostic feedback, monolithically
integrated in Smart SIPMOS technology. Providing embedded protective functions.
1
Semiconductor Group
)
Overload protection
Current limitation
Short circuit protection
Thermal shutdown
Overvoltage protection (including load dump)
Fast demagnetization of inductive loads
Reverse battery protection
Undervoltage and overvoltage shutdown with auto-restart
and hysteresis
Open drain diagnostic output
Open load detection in ON-state
CMOS compatible input
Loss of ground and loss of V
Electrostatic discharge (ESD) protection
All types of resistive, inductive and capacitve loads
Replaces electromechanical relays, fuses and discrete circuits
C compatible power switch with diagnostic feedback for 12 V and 24 V DC grounded loads
With external current limit (e.g. resistor R
current limited by connected load.
4
2
ST
IN
ESD
1 )
Voltage
Voltage
sensor
source
bb
Logic
protection
V
Logic
Overvoltage
GND
protection
Charge pump
Level shifter
Rectifier
=150 ) in GND connection, resistor in series with ST connection, reverse load
1
GND
Signal GND
1 of 14
Current
Product Summary
Overvoltage protection
Operating voltage
On-state resistance
Load current (ISO)
Current limitation
limit
Short to Vbb
unclamped
Open load
detection
ind. loads
Limit for
Standard
protection
Gate
5
Temperature
sensor
TO-220AB/5
PROFET
Straight leads
R
GND
+ V bb
O
PROFET ® BTS426L1
OUT
V
V
R
I
I
L(ISO)
L(SCr)
bb(AZ)
bb(on)
ON
Load GND
1
3
5
5
Load
5.0 ... 34 V
2003-Oct-01
SMD
7.0
43
60 m
16
1
5
V
A
A

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BTS426L1E3043 Summary of contents

Page 1

Smart Highside Power Switch Features Overload protection Current limitation Short circuit protection Thermal shutdown Overvoltage protection (including load dump) Fast demagnetization of inductive loads 1 ) Reverse battery protection Undervoltage and overvoltage shutdown with auto-restart and hysteresis Open drain diagnostic ...

Page 2

Pin Symbol 1 GND - OUT O (Load, L) Maximum Ratings °C unless otherwise specified j Parameter Supply voltage (overvoltage protection see page 3) Supply ...

Page 3

Electrical Characteristics Parameter and Conditions ° unless otherwise specified j bb Load Switching Capabilities and Characteristics On-state resistance (pin Nominal load current, ISO Norm ...

Page 4

Parameter and Conditions ° unless otherwise specified j bb Protection Functions 9) Initial peak short circuit current limit (pin Repetitive short circuit shutdown current limit (see ...

Page 5

Parameter and Conditions ° unless otherwise specified Input and Status Feedback Input resistance T =-40..150°C, see circuit page 6 j Input turn-on threshold voltage Input turn-off threshold voltage ...

Page 6

Truth Table Input- Output level level Normal L L operation H H Open load Short circuit Overtem perature H L Undervoltage Overvoltage ...

Page 7

Status output R ST(ON) GND ESD-Zener diode: 6.1 V typ., max 5 mA; R mA, ESD zener diodes are not to be used as voltage clamp at DC conditions. Operation in this mode may result in a drift of the ...

Page 8

GND disconnect with GND pull PROFET ST 4 GND GND bb Any kind of load device stays off GND > IN IN(T+) ...

Page 9

Typ. transient thermal impedance chip case Z = f(t )Z [K/W] thJC p thJC 10 1 0.1 0.01 1E-5 1E-4 1E-3 1E-2 Transient thermal impedance chip ambient air Z = f(t )Z [K/W] thJA p thJA 100 10 1 0.1 ...

Page 10

Timing diagrams Figure 1a: V turn on OUT ST open drain proper turn on under all conditions Figure 2a: Switching a lamp OUT I L Semiconductor Group Figure 2b: Switching an inductive ...

Page 11

Figure 4a: Overtemperature: Reset if T < OUT T J Figure 5a: Open load: detection in ON-state, turn on/off to open load IN t d(ST OUT I L open The status delay time ...

Page 12

Figure 6a: Undervoltage bb(under) V OUT ST open drain Figure 6b: Undervoltage restart of charge pump bb(over bb(o rst) bb(u rst) V bb(u cp) V bb(under) charge pump starts at V ...

Page 13

Package and Ordering Code All dimensions in mm Standard TO-220AB/5 BTS426L1 TO-220AB/5, Option E3043 BTS426L1 E3043 Semiconductor Group Ordering code SMD TO-220AB/5, Opt. E3062 Q67060-S6108-A2 BTS426L1 E3062A Changed since 04.96 Date Change Ordering code Dec t 1996 to 800µs, typical ...

Page 14

... Published by Infineon Technologies AG, St.-Martin-Strasse 53, D-81669 München © Infineon Technologies AG 2001 All Rights Reserved. Attention please! The information herein is given to describe certain components and shall not be considered as a guarantee of characteristics. Terms of delivery and rights to technical change reserved. We hereby disclaim any and all warranties, including but not limited to warranties of non-infringement, regarding circuits, descriptions and charts stated herein ...

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