FDB6676S Fairchild Semiconductor, FDB6676S Datasheet
FDB6676S
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FDB6676S Summary of contents
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... C unless otherwise noted A (Note 1) (Note Derate above 25 C Reel Size 13’’ Tube October 2001 DS(ON 8 4.5 V DS(ON Ratings Units 150 0.56 C –55 to +150 C 275 1.8 C/W 55 C/W Tape width Quantity 24mm 800 n/a 45 FDP6676S/FDB6676S Rev. C (W) ...
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... A/µs (Note Min Typ Max Units 310 mV/ C 500 µA 100 nA –100 –8.4 mV/ C 4.7 6.5 m 5.2 8.0 7 145 S 4853 pF 850 pF 316 142 0.4 0.7 V 0.5 28 FDP6676S/FDB6676S Rev C (W) ...
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... Figure 6. Body Diode Forward Voltage Variation with Source Current and Temperature. 3.0V 3.5V 4.5V 10V 100 125 150 I , DRAIN CURRENT ( 19A 125 GATE TO SOURCE VOLTAGE ( -55 C 0.2 0.4 0 BODY DIODE FORWARD VOLTAGE (V) SD FDP6676S/FDB6676S Rev C (W) 10 0.8 ...
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... ISS C OSS DRAIN TO SOURCE VOLTAGE (V) DS SINGLE PULSE R = 1.8°C 25° 100 t , TIME (sec) 1 Power Dissipation. R ( 1.8 °C Duty Cycle 100 1000 FDP6676S/FDB6676S Rev C (W) 30 1000 ...
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... This diode high temperature and high reverse voltage. This will increase the power in the device. 0.1 0.01 0.001 0.0001 0.00001 0 Figure 14. SyncFET diode reverse leakage versus drain-source voltage and 100 REVERSE VOLTAGE (V) DS temperature. FDP6676S/FDB6676S Rev C (W) ...
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... TRADEMARKS The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended exhaustive list of all such trademarks. ACEx™ FAST Bottomless™ FASTr™ FRFET™ CoolFET™ GlobalOptoisolator™ CROSSVOLT™ GTO™ DenseTrench™ ...