FDB6676S Fairchild Semiconductor, FDB6676S Datasheet

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FDB6676S

Manufacturer Part Number
FDB6676S
Description
30V N-Channel PowerTrench SyncFET
Manufacturer
Fairchild Semiconductor
Datasheet
FDP6676S / FDB6676S
30V N-Channel PowerTrench SyncFET
General Description
This MOSFET is designed to replace a single MOSFET
and parallel Schottky diode in synchronous DC:DC
power supplies.
maximize power conversion efficiency, providing a low
R
includes an integrated Schottky diode using Fairchild’s
monolithic SyncFET technology.
the FDP/B6676S as the low-side switch in a
synchronous rectifier is indistinguishable from the
performance of the FDP/B6676 in parallel with a
Schottky diode.
2001 Fairchild Semiconductor Corporation
Absolute Maximum Ratings
Symbol
V
V
I
P
T
T
Thermal Characteristics
R
R
Package Marking and Ordering Information
DS(ON)
D
J
L
DSS
GSS
D
, T
G
JC
JA
Device Marking
STG
D
FDB6676S
FDP6676S
S
and low gate charge.
Drain-Source Voltage
Gate-Source Voltage
Drain Current
Total Power Dissipation @ T
Operating and Storage Junction Temperature Range
Maximum lead temperature for soldering purposes,
1/8” from case for 5 seconds
Thermal Resistance, Junction-to-Case
Thermal Resistance, Junction-to-Ambient
This 30V MOSFET is designed to
– Continuous
– Pulsed
TO-220
FDP Series
FDB6676S
FDP6676S
Device
The performance of
Parameter
The FDP/B6676S
C
= 25 C
G
T
Derate above 25 C
A
=25
S
o
C unless otherwise noted
Reel Size
Tube
13’’
(Note 1)
(Note 1)
Features
TO-263AB
FDB Series
D
38 A, 30 V.
Includes SyncFET Schottky body diode
Low gate charge (40nC typical)
High performance trench technology for extremely
High power and current handling capability
low R
DS(ON)
and fast switching
Tape width
R
R
DS(ON)
DS(ON)
–55 to +150
24mm
Ratings
n/a
0.56
150
275
1.8
30
76
70
55
16
= 6.5 m
= 8.0 m
G
FDP6676S/FDB6676S Rev. C (W)
@ V
@ V
October 2001
D
S
GS
GS
= 10 V
= 4.5 V
Quantity
800
45
Units
W/ C
C/W
C/W
W
V
V
A
C
C

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FDB6676S Summary of contents

Page 1

... C unless otherwise noted A (Note 1) (Note Derate above 25 C Reel Size 13’’ Tube October 2001 DS(ON 8 4.5 V DS(ON Ratings Units 150 0.56 C –55 to +150 C 275 1.8 C/W 55 C/W Tape width Quantity 24mm 800 n/a 45 FDP6676S/FDB6676S Rev. C (W) ...

Page 2

... A/µs (Note Min Typ Max Units 310 mV/ C 500 µA 100 nA –100 –8.4 mV/ C 4.7 6.5 m 5.2 8.0 7 145 S 4853 pF 850 pF 316 142 0.4 0.7 V 0.5 28 FDP6676S/FDB6676S Rev C (W) ...

Page 3

... Figure 6. Body Diode Forward Voltage Variation with Source Current and Temperature. 3.0V 3.5V 4.5V 10V 100 125 150 I , DRAIN CURRENT ( 19A 125 GATE TO SOURCE VOLTAGE ( -55 C 0.2 0.4 0 BODY DIODE FORWARD VOLTAGE (V) SD FDP6676S/FDB6676S Rev C (W) 10 0.8 ...

Page 4

... ISS C OSS DRAIN TO SOURCE VOLTAGE (V) DS SINGLE PULSE R = 1.8°C 25° 100 t , TIME (sec) 1 Power Dissipation. R ( 1.8 °C Duty Cycle 100 1000 FDP6676S/FDB6676S Rev C (W) 30 1000 ...

Page 5

... This diode high temperature and high reverse voltage. This will increase the power in the device. 0.1 0.01 0.001 0.0001 0.00001 0 Figure 14. SyncFET diode reverse leakage versus drain-source voltage and 100 REVERSE VOLTAGE (V) DS temperature. FDP6676S/FDB6676S Rev C (W) ...

Page 6

... TRADEMARKS The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended exhaustive list of all such trademarks. ACEx™ FAST Bottomless™ FASTr™ FRFET™ CoolFET™ GlobalOptoisolator™ CROSSVOLT™ GTO™ DenseTrench™ ...

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