FQB10N20C Fairchild Semiconductor, FQB10N20C Datasheet

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FQB10N20C

Manufacturer Part Number
FQB10N20C
Description
200V N-Channel MOSFET
Manufacturer
Fairchild Semiconductor
Datasheet

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Part Number
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Quantity
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Part Number:
FQB10N20C
Manufacturer:
FAIRCHILD
Quantity:
12 500
©2003 Fairchild Semiconductor Corporation
FQB10N20C/FQI10N20C
200V N-Channel MOSFET
General Description
These N-Channel enhancement mode power field effect
transistors are produced using Fairchild’s proprietary,
planar stripe, DMOS technology.
This advanced technology has been especially tailored to
minimize on-state resistance, provide superior switching
performance, and withstand high energy pulse in the
avalanche and commutation mode. These devices are well
suited for high efficiency switching DC/DC converters,
switch mode power supplies, DC-AC converters for
uninterrupted power supplies and motor controls.
Absolute Maximum Ratings
Thermal Characteristics
V
I
I
V
E
I
E
dv/dt
P
T
T
R
R
R
D
DM
AR
J
L
Symbol
DSS
GSS
AS
AR
D
Symbol
, T
JC
JA
JA
STG
G
Drain-Source Voltage
Drain Current
Drain Current
Gate-Source Voltage
Single Pulsed Avalanche Energy
Avalanche Current
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt
Power Dissipation (T
Operating and Storage Temperature Range
Maximum lead temperature for soldering purposes,
1/8" from case for 5 seconds
Thermal Resistance, Junction-to-Case
Thermal Resistance, Junction-to-Ambient *
Thermal Resistance, Junction-to-Ambient
S
D
FQB Series
2
-PAK
D
- Continuous (T
- Continuous (T
- Pulsed
- Derate above 25°C
C
Parameter
= 25°C)
Parameter
G
T
C
C
C
D
= 25°C unless otherwise noted
= 25°C)
= 100°C)
S
(Note 1)
(Note 2)
(Note 1)
(Note 1)
(Note 3)
I
FQI Series
Features
• 9.5A, 200V, R
• Low gate charge ( typical 20 nC)
• Low Crss ( typical 40.5 pF)
• Fast switching
• 100% avalanche tested
• Improved dv/dt capability
2
-PAK
FQB10N20C/FQI10N20C
DS(on)
Typ
--
--
--
-55 to +150
= 0.36
0.57
210
300
200
9.5
6.0
9.5
7.2
5.5
38
72
30
G
@V
!
!
Max
1.74
62.5
40
QFET
GS
! "
! "
= 10 V
!
!
!
!
S
D
"
"
"
"
"
"
Rev. A, August 2003
Units
W/°C
Units
°C/W
°C/W
°C/W
V/ns
mJ
mJ
°C
°C
W
V
A
A
A
V
A
TM

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FQB10N20C Summary of contents

Page 1

... C (Note 1) (Note 2) (Note 1) (Note 1) (Note 3) = 25°C) C Parameter QFET = 0. DS(on " " ! " ! " " " " " FQB10N20C/FQI10N20C Units 200 V 9 210 mJ 9.5 A 7.2 mJ 5.5 V/ 0.57 W/°C -55 to +150 °C 300 °C Typ Max Units -- 1.74 °C/W ...

Page 2

... 9.5A, di/dt 300A Starting DSS, 4. Pulse Test : Pulse width 300 s, Duty cycle 5. Essentially independent of operating temperature ©2003 Fairchild Semiconductor Corporation T = 25°C unless otherwise noted C Test Conditions 250 250 A, Referenced to 25° 200 V, V ...

Page 3

... C rss 400 ※ Notes : 200 MHz Drain-Source Voltage [V] DS Figure 5. Capacitance Characteristics ©2003 Fairchild Semiconductor Corporation 1 10 150 ※ Notes : 1. 250 μ s Pulse Test = 25 ℃ Figure 2. Transfer Characteristics ...

Page 4

... V , Drain-Source Voltage [V] DS Figure 9. Maximum Safe Operating Area ©2003 Fairchild Semiconductor Corporation (Continued) 3.0 2.5 2.0 1.5 1.0 ※ Notes : 0.5 = 250 μ 0.0 100 150 200 -100 o C] Figure 8 ...

Page 5

... Unclamped Inductive Switching Test Circuit & Waveforms 10V 10V ©2003 Fairchild Semiconductor Corporation Gate Charge Test Circuit & Waveform Same Type Same Type as DUT as DUT 10V 10V DUT DUT ...

Page 6

... Peak Diode Recovery dv/dt Test Circuit & Waveforms Driver ) ( Driver ) DUT ) ( DUT ) DUT ) ( DUT ) ©2003 Fairchild Semiconductor Corporation + + DUT DUT Driver Driver Same Type Same Type ...

Page 7

... Package Dimensions 9.90 0.20 1.27 0.10 2.54 TYP 10.00 ©2003 Fairchild Semiconductor Corporation 2 D PAK 0.80 0.10 2.54 TYP 0.20 4.50 0.20 +0.10 1.30 –0.05 0.10 0.15 2.40 0.20 +0.10 0.50 –0.05 10.00 0.20 (8.00) (4.40) (2XR0.45) 0.80 0.10 Rev. A, August 2003 ...

Page 8

... Package Dimensions 9.90 1.27 0.10 2.54 TYP 10.00 ©2003 Fairchild Semiconductor Corporation (Continued PAK 0.20 1.47 0.10 0.80 0.10 2.54 TYP 0.20 4.50 0.20 +0.10 1.30 –0.05 +0.10 0.50 2.40 –0.05 0.20 Rev. A, August 2003 ...

Page 9

... TRADEMARKS The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended exhaustive list of all such trademarks. ACEx™ FACT Quiet Series™ ® ActiveArray™ FAST Bottomless™ FASTr™ CoolFET™ FRFET™ ...

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