RJK2017DPP Renesas, RJK2017DPP Datasheet - Page 2

• Manufacturer Part Number: RJK2017DPP
• Description: N-Channel Power MOSFET
• Manufacturer: Renesas

RJK2017DPP
Electrical Characteristics
Notes: 5. Pulse test
REJ03G1797-0200 Rev.2.00 Aug 26, 2009
Page 2 of 3
Drain to source breakdown voltage
Zero gate voltage drain current
Gate to source leak current
Gate to source cutoff voltage
Static drain to source on state
resistance
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Total gate charge
Gate to source charge
Gate to drain charge
Body-drain diode forward voltage
Body-drain diode reverse recovery time
Item
Symbol
V
V
R
Coss
(BR)DSS
Crss
Ciss
t
t
Qgs
Qgd
I
I
V
GS(off)
DS(on)
d(on)
d(off)
Qg
GSS
DSS
t
t
t
DF
rr
r
f
Min
200
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
2
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0.036
4800
0.88
Typ
290
150
90
50
40
95
40
66
26
16
—
—
—
—
0.047
Max
1.35
—
±1
—
—
—
—
—
—
—
—
—
—
—
1
4
Unit
nC
nC
μA
μA
pF
pF
pF
nC
ns
ns
ns
ns
ns
Ω
V
V
V
I
V
V
V
I
V
V
f = 1 MHz
I
V
R
Rg = 10 Ω
V
V
I
I
I
di
D
D
D
D
F
F
DS
GS
DS
DS
GS
GS
DD
GS
L
F
= 45 A, V
= 45 A, V
= 10 mA, V
= 22.5 A, V
= 22.5 A
= 45 A
/dt = 100 A/μs
= 4.5 Ω
= 200 V, V
= 10 V, I
= 25 V
= ±30 V, V
= 0
= 10 V
= 160 V
= 10 V
Test conditions
GS
GS
D
GS
GS
= 1 mA
= 0
= 0
GS
DS
= 0
= 10 V
= 0
= 0
Note5
(Ta = 25°C)
Note5
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