STW5NB100 ST Microelectronics, STW5NB100 Datasheet

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STW5NB100

Manufacturer Part Number
STW5NB100
Description
N-CHANNEL MOSFET
Manufacturer
ST Microelectronics
Datasheet
1.STW5NB100.pdf (5 pages)

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Company:
Bonase Electronics (HK) Co., Limited Bonase Electronics (HK) Co., Limited
Part Number:
STW5NB100
Manufacturer:
ST
Quantity:
12 500
DataSheet4U.com
www.DataSheet4U.com
DataSheet
4
U
DESCRIPTION
Using the latest high voltage MESH OVERLAY
process, SGS-Thomson has designed an ad-
vanced family of power MOSFETs with outstand-
ing performances. The new patent pending strip
layout coupled with the Company’s proprietary
edge termination structure, gives the lowest
RDS(on) per area, exceptional avalanche and
dv/dt capabilities and unrivalled gate charge and
switching characteristics.
APPLICATIONS
ABSOLUTE MAXIMUM RATINGS
( ) Pulse width limited by safe operating area
June 1998
.com
STW5NB100
Symbol
dv/dt
I
TYPICAL R
EXTREMELY HIGH dv/dt CAPABILITY
100% AVALANCHE TESTED
LOW INTRINSIC CAPACITANCE
GATE CHARGE MINIMIZED
REDUCED VOLTAGE SPREAD
HIGH CURRENT, HIGH SPEED SWITCHING
SWITCH MODE POWER SUPPLY (SMPS)
DC-AC CONVERTER FOR WELDING
EQUIPMENT AND UNINTERRUPTABLE
POWER SUPPLY AND MOTOR DRIVE
V
DM
V
V
P
T
DGR
30V GATE TO SOURCE VOLTAGE RATING
I
I
T
DS
GS
stg
D
D
tot
TYPE
( )
j
(1)
Drain-source Voltage (V
Drain- gate Voltage (R
Gate-source Voltage
Drain Current (continuous) at T
Drain Current (continuous) at T
Drain Current (pulsed)
Total Dissipation at T
Derating Factor
Peak Diode Recovery voltage slope
Storage Temperature
Max. Operating Junction Temperature
®
DS(on)
1000 V
V
= 4
DSS
N - CHANNEL 1000V - 4 - 4.3A - TO-247
< 4.4
Parameter
R
DS(on)
c
GS
= 25
GS
= 20 k )
= 0)
o
C
4.3 A
c
c
= 25
= 100
DataSheet4U.com
I
D
o
C
o
C
(
1
) I
SD
PowerMESH
INTERNAL SCHEMATIC DIAGRAM
di/dt
200 A/ s, V
-65 to 150
Value
1000
1000
1.28
160
150
4.3
2.7
17
TO-247
4
30
STW5NB100
DD
V
(BR)DSS
PRELIMINARY DATA
1
2
, T
MOSFET
3
j
T
JMAX
W/
Unit
V/ns
o
o
W
V
V
V
A
A
A
C
C
o
C
1/5

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STW5NB100 Summary of contents

Page 1

... N - CHANNEL 1000V - 4 - 4.3A - TO-247 R I DSS DS(on) D < 4.4 4 DataSheet4U.com Parameter = 100 STW5NB100 PowerMESH MOSFET PRELIMINARY DATA TO-247 INTERNAL SCHEMATIC DIAGRAM Value 1000 1000 30 4.3 2.7 17 160 1.28 4 -65 to 150 150 ) I di/dt 200 ...

Page 2

... STW5NB100 THERMAL DATA R Thermal Resistance Junction-case thj-case R Thermal Resistance Junction-ambient thj-amb R Thermal Resistance Case-sink thc-sink T Maximum Lead Temperature For Soldering Purpose l AVALANCHE CHARACTERISTICS Symbol I Avalanche Current, Repetitive or Not-Repetitive AR (pulse width limited Single Pulse Avalanche Energy AS (starting T ELECTRICAL CHARACTERISTICS (T OFF ...

Page 3

... V = 800 4 Test Conditions di/dt = 100 100 V DataSheet4U.com T = 150 STW5NB100 Min. Typ. Max. Unit Min. Typ. Max. Unit Min. Typ. ...

Page 4

... STW5NB100 DIM Dia 4/5 DataSheet4U.com 4 DataSheet U .com TO-247 MECHANICAL DATA mm MIN. TYP. MAX. 4.7 5.3 2.2 2.6 0.4 0.8 1 1.4 2 2.4 3 3.4 10.9 15.3 15.9 19.7 20.3 14.2 14.8 34.6 5 3.55 3.65 DataSheet4U.com inch MIN. TYP. MAX. 0.185 0.209 0.087 0.102 0.016 0.031 0.039 0.055 0.079 0.094 0.118 0.134 0.429 0.602 0.626 ...

Page 5

... Australia - Brazil - Canada - China - France - Germany - Italy - Japan - Korea - Malaysia - Malta - Morocco - The Netherlands - Singapore - Spain - Sweden - Switzerland - Taiwan - Thailand - United Kingdom - U.S.A. DataSheet4U.com 4 DataSheet U .com DataSheet4U.com The ST logo is a trademark of STMicroelectronics © 1998 STMicroelectronics – Printed in Italy – All Rights Reserved STMicroelectronics GROUP OF COMPANIES . STW5NB100 5/5 ...

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