IPD03N03LA Infineon Technologies, IPD03N03LA Datasheet

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IPD03N03LA

Manufacturer Part Number
IPD03N03LA
Description
Ideal for high-frequency dc/dc converters Qualified according to JEDEC for target applications
Manufacturer
Infineon Technologies
Datasheet

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Rev. 0.93 - target data sheet
Features
• Ideal for high-frequency dc/dc converters
• Qualified according to JEDEC
• N-channel, logic level
• Excellent gate charge x R
• Superior thermal resistance
• 175 °C operating temperature
• Pb-free lead plating; RoHS compliant
Maximum ratings, at T
Parameter
Continuous drain current
Pulsed drain current
Avalanche energy, single pulse
Reverse diode dv /dt
Gate source voltage
Power dissipation
Operating and storage temperature
IEC climatic category; DIN IEC 68-1
OptiMOS
Type
Package
Ordering Code
Marking
®
2 Power-Transistor
IPD03N03LA G
P-TO252-3-11
Q67042-S4249
03N03LA
4)
j
=25 °C, unless otherwise specified
DS(on)
1)
product (FOM)
for target applications
Symbol Conditions
I
I
E
dv /dt
V
P
T
D
D,pulse
j
AS
GS
tot
, T
IPS03N03LA G
P-TO251-3-11
Q67042-S4253
03N03LA
stg
T
T
T
I
I
di /dt =200 A/µs,
T
T
D
D
page 1
C
C
C
j,max
C
=90 A, R
=90 A, V
=25 °C
=100 °C
=25 °C
=25 °C
=175 °C
2)
3)
DS
GS
=20 V,
=25
Product Summary
V
R
I
D
DS
DS(on),max
IPD03N03LA G
(SMD Version)
-55 ... 175
55/175/56
Value
360
300
±20
115
90
90
6
IPS03N03LA G
3.2
25
90
Unit
A
mJ
kV/µs
V
W
°C
V
m
A
2004-10-27

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IPD03N03LA Summary of contents

Page 1

... = = /dt di /dt =200 A/µs, T =175 °C j,max =25 °C tot stg page 1 IPD03N03LA G IPS03N03LA (SMD Version) 3 Value Unit 360 300 mJ 6 kV/µs ±20 V 115 W -55 ... 175 °C 55/175/56 2004-10-27 ...

Page 2

... = = SMD version |>2 DS(on)max = =1.3 K/W the chip is able to carry 142 A. thJC <- (one layer, 70 µm thick) copper area for drain page 2 IPD03N03LA G IPS03N03LA G Values Unit min. typ. max 1.3 K 1.2 1 0.1 1 µA ...

Page 3

... =25 ° S,pulse = =25 ° = /dt =400 A/µs F page 3 IPD03N03LA G IPS03N03LA G Values Unit min. typ. max. - 3900 5200 pF - 1500 2000 - 170 260 - 6 ...

Page 4

... [ Typ. forward transconductance g =f 180 160 140 120 100 ° [V] GS page 4 IPD03N03LA G IPS03N03LA =25 ° 3 3.4 V 3.2 V 3 [A] D =25 ° [ 100 ...

Page 5

... C 4 Max. transient thermal impedance Z =f(t thJC p parameter µs 10 µs 1 100 µ 0 0.01 0.001 0 10 100 10 [V] DS page 5 IPD03N03LA G IPS03N03LA G ≥ 100 150 T [° 0.5 0.2 0.1 0.05 0.02 0.01 single pulse ...

Page 6

... Forward characteristics of reverse diode I =f parameter: T 1000 100 10 Crss 0.0 [V] DS page 6 IPD03N03LA G IPS03N03LA 700 µA 70 µA - 100 140 T [° °C, 98% 175 °C, 98% 25 °C 175 °C 0.5 1.0 1.5 V [V] SD 180 2 ...

Page 7

... AV 16 Gate charge waveforms s(th) Q g(th) 60 100 140 180 [°C] j page 7 IPD03N03LA G IPS03N03LA =45 A pulsed gate [nC] gate ...

Page 8

... Package Outline P-TO252-3-11: Outline Footprint: Dimensions in mm Rev. 0.93 - target data sheet IPD03N03LA G Packaging: page 8 IPS03N03LA G 2004-10-27 ...

Page 9

... Life support devices or systems are intended to be implanted in the human body support and/or maintain and sustain and/or protect human life. If they fail reasonable to assume that the health of the user or other persons may be endangered. Rev. 0.93 - target data sheet IPD03N03LA G page 9 IPS03N03LA G 2004-10-27 ...

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