IPD03N03LA Infineon Technologies, IPD03N03LA Datasheet
IPD03N03LA
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IPD03N03LA Summary of contents
Page 1
... = = /dt di /dt =200 A/µs, T =175 °C j,max =25 °C tot stg page 1 IPD03N03LA G IPS03N03LA (SMD Version) 3 Value Unit 360 300 mJ 6 kV/µs ±20 V 115 W -55 ... 175 °C 55/175/56 2004-10-27 ...
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... = = SMD version |>2 DS(on)max = =1.3 K/W the chip is able to carry 142 A. thJC <- (one layer, 70 µm thick) copper area for drain page 2 IPD03N03LA G IPS03N03LA G Values Unit min. typ. max 1.3 K 1.2 1 0.1 1 µA ...
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... =25 ° S,pulse = =25 ° = /dt =400 A/µs F page 3 IPD03N03LA G IPS03N03LA G Values Unit min. typ. max. - 3900 5200 pF - 1500 2000 - 170 260 - 6 ...
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... [ Typ. forward transconductance g =f 180 160 140 120 100 ° [V] GS page 4 IPD03N03LA G IPS03N03LA =25 ° 3 3.4 V 3.2 V 3 [A] D =25 ° [ 100 ...
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... C 4 Max. transient thermal impedance Z =f(t thJC p parameter µs 10 µs 1 100 µ 0 0.01 0.001 0 10 100 10 [V] DS page 5 IPD03N03LA G IPS03N03LA G ≥ 100 150 T [° 0.5 0.2 0.1 0.05 0.02 0.01 single pulse ...
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... Forward characteristics of reverse diode I =f parameter: T 1000 100 10 Crss 0.0 [V] DS page 6 IPD03N03LA G IPS03N03LA 700 µA 70 µA - 100 140 T [° °C, 98% 175 °C, 98% 25 °C 175 °C 0.5 1.0 1.5 V [V] SD 180 2 ...
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... AV 16 Gate charge waveforms s(th) Q g(th) 60 100 140 180 [°C] j page 7 IPD03N03LA G IPS03N03LA =45 A pulsed gate [nC] gate ...
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... Package Outline P-TO252-3-11: Outline Footprint: Dimensions in mm Rev. 0.93 - target data sheet IPD03N03LA G Packaging: page 8 IPS03N03LA G 2004-10-27 ...
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... Life support devices or systems are intended to be implanted in the human body support and/or maintain and sustain and/or protect human life. If they fail reasonable to assume that the health of the user or other persons may be endangered. Rev. 0.93 - target data sheet IPD03N03LA G page 9 IPS03N03LA G 2004-10-27 ...