IPD03N03LB Infineon Technologies, IPD03N03LB Datasheet
IPD03N03LB
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IPD03N03LB Summary of contents
Page 1
... /dt di /dt =200 A/µs, T =175 °C j,max =25 °C tot stg page 1 IPD03N03LB 3.3 DS(on),max D PG-TO252-3-11 Value 90 90 360 240 6 ±20 115 -55 ... 175 55/175/ Unit A mJ kV/µ °C ...
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... A DS( |>2 DS(on)max = =1.3 K/W the chip is able to carry 142 A. thJC <- (one layer, 70 µm thick) copper area for drain page 2 IPD03N03LB G Values min. typ. max 1 1 100 = 100 - 3 ...
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... V oss =25 ° S,pulse = =25 ° = /dt =400 A/µs F page 3 IPD03N03LB G Values Unit min. typ. max. - 3900 5200 pF - 1400 1900 - 180 270 - 6 ...
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... 100 150 200 4 Max. transient thermal impedance Z =f(t thJC parameter µs 10 µs 1 100 µ 0 0.01 0.001 10 100 10 [V] page 4 IPD03N03LB G ≥ 100 150 T [° 0.5 0.2 0.1 0.05 0.02 0.01 single pulse ...
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... [V] 8 Typ. forward transconductance g =f 180 160 140 120 100 ° [V] page 5 IPD03N03LB =25 ° 3 [A] D =25 ° [A] D 3.8 V 4 100 80 ...
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... Typ. gate threshold voltage V =f(T GS(th) parameter: I 2.5 2 1.5 typ 1 0.5 0 100 140 180 12 Forward characteristics of reverse diode I =f parameter: T 1000 100 [V] page 6 IPD03N03LB 700 µA 70 µA -60 - 100 T [° °C 175 °C 0.0 0.5 1.0 1.5 V [V] SD 140 180 25 ° ...
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... I GS gate parameter 100 °C 25 ° 100 1000 0 16 Gate charge waveforms s(th (th) 100 140 180 page 7 IPD03N03LB G =45 A pulsed [nC] gate 2004-12- gate ...
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... Package Outline P-TO252-3-11: Outline Footprint: Dimensions in mm Rev. 1.11 Packaging: page 8 IPD03N03LB G 2004-12-16 ...
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... Life support devices or systems are intended to be implanted in the human body support and/or maintain and sustain and/or protect human life. If they fail reasonable to assume that the health of the user or other persons may be endangered. Rev. 1.11 page 9 IPD03N03LB G 2004-12-16 ...