IPD053N06N3G Infineon Technologies, IPD053N06N3G Datasheet
IPD053N06N3G
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IPD053N06N3G Summary of contents
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Type (TM) OptiMOS 3 Power-Transistor Features • Ideal for high frequency switching and sync. rec. • Optimized technology for DC/DC converters • Excellent gate charge x R DS(on) • N-channel, normal level • 100% avalanche tested • Pb-free plating; RoHS ...
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Maximum ratings =25 °C, unless otherwise specified j Parameter Power dissipation Operating and storage temperature IEC climatic category; DIN IEC 68-1 Parameter Thermal characteristics Thermal resistance, junction - case SMD version, device on PCB Electrical characteristics ...
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Parameter Dynamic characteristics Input capacitance Output capacitance Reverse transfer capacitance Turn-on delay time Rise time Turn-off delay time Fall time Gate Charge Characteristics Gate to source charge Gate charge at threshold Gate to drain charge Switching charge Gate charge total ...
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Power dissipation P =f(T ) tot C 140 120 100 Safe operating area I =f =25 ° parameter limited ...
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Typ. output characteristics I =f =25 ° parameter 360 10 V 320 280 240 200 160 120 Typ. transfer characteristics I =f |>2|I ...
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Drain-source on-state resistance =10 V DS(on max -60 - Typ. capacitances C =f MHz ...
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Avalanche characteristics =25 Ω parameter: T j(start) 100 Drain-source breakdown voltage V =f BR(DSS ...
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PG-TO252-3 (D-Pak) Rev.2.0 page 8 IPD053N06N3 G 2008-11-25 ...
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... Infineon Technologies Office. Infineon Technologies components may be used in life-support devices or systems only with the express written approval of Infineon Technologies failure of such components can reasonably be expected to cause the failure of that life-support device or system or to affect the safety or effectiveness of that device or system ...