IPD053N08N3G

Manufacturer Part NumberIPD053N08N3G
DescriptionOptiMOS Power-Transistor
ManufacturerInfineon Technologies
IPD053N08N3G datasheet
 


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OptiMOS
®
3 Power-Transistor
Features
• N-channel, normal level
• Excellent gate charge x R
DS(on)
• Very low on-resistance R
DS(on)
• 175 °C operating temperature
• Pb-free lead plating; RoHS compliant
• Qualified according to JEDEC
• Ideal for high-frequency switching and synchronous rectification
IPD053N08N3 G
Type
Package
PG-TO252-3
053N08N
Marking
Maximum ratings, at T
=25 °C, unless otherwise specified
j
Parameter
Continuous drain current
2)
Pulsed drain current
Avalanche energy, single pulse
Gate source voltage
Power dissipation
Operating and storage temperature
IEC climatic category; DIN IEC 68-1
Rev. 1.0
Product Summary
V
DS
R
DS(on),max
product (FOM)
I
D
1)
for target application
Symbol Conditions
2)
I
T
=25 °C
D
C
T
=100 °C
C
I
T
=25 °C
D,pulse
C
E
I
=90 A, R
=25
AS
D
GS
V
GS
P
T
=25 °C
tot
C
T
, T
j
stg
page 1
IPD053N08N3 G
80
V
5.3
m
90
A
previous engineering
sample code:
IPD06CN08N
Value
Unit
90
A
90
360
190
mJ
±20
V
150
W
-55 ... 175
°C
55/175/56
2008-01-25

IPD053N08N3G Summary of contents

  • Page 1

    OptiMOS ® 3 Power-Transistor Features • N-channel, normal level • Excellent gate charge x R DS(on) • Very low on-resistance R DS(on) • 175 °C operating temperature • Pb-free lead plating; RoHS compliant • Qualified according to JEDEC • Ideal ...

  • Page 2

    Parameter Thermal characteristics Thermal resistance, junction - case Thermal resistance, junction - ambient Electrical characteristics Static characteristics Drain-source breakdown voltage Gate threshold voltage Zero gate voltage drain current Gate-source leakage current Drain-source on-state resistance Gate resistance Transconductance 1) ...

  • Page 3

    Parameter Dynamic characteristics Input capacitance Output capacitance Reverse transfer capacitance Turn-on delay time Rise time Turn-off delay time Fall time Gate Charge Characteristics Gate to source charge Gate to drain charge Switching charge Gate charge total Gate plateau voltage Output ...

  • Page 4

    Power dissipation P =f(T ) tot C 180 150 120 Safe operating area I =f =25 ° parameter limited by ...

  • Page 5

    Typ. output characteristics I =f =25 ° parameter 360 320 280 240 200 6 V 160 120 5 4 ...

  • Page 6

    Drain-source on-state resistance =10 V DS(on -60 - Typ. capacitances C =f ...

  • Page 7

    Avalanche characteristics parameter: T j(start) 100 Drain-source breakdown voltage V =f BR(DSS ...

  • Page 8

    PG-TO252-3 (D-Pak) Rev. 1.0 page 8 IPD053N08N3 G 2008-01-25 ...

  • Page 9

    ... Infineon Technologies Office. Infineon Technologies components may be used in life-support devices or systems only with the express written approval of Infineon Technologies failure of such components can reasonably be expected to cause the failure of that life-support device or system or to affect the safety or effectiveness of that device or system ...