IPD053N08N3G Infineon Technologies, IPD053N08N3G Datasheet
IPD053N08N3G
Available stocks
Related parts for IPD053N08N3G
IPD053N08N3G Summary of contents
Page 1
OptiMOS ® 3 Power-Transistor Features • N-channel, normal level • Excellent gate charge x R DS(on) • Very low on-resistance R DS(on) • 175 °C operating temperature • Pb-free lead plating; RoHS compliant • Qualified according to JEDEC • Ideal ...
Page 2
Parameter Thermal characteristics Thermal resistance, junction - case Thermal resistance, junction - ambient Electrical characteristics Static characteristics Drain-source breakdown voltage Gate threshold voltage Zero gate voltage drain current Gate-source leakage current Drain-source on-state resistance Gate resistance Transconductance 1) ...
Page 3
Parameter Dynamic characteristics Input capacitance Output capacitance Reverse transfer capacitance Turn-on delay time Rise time Turn-off delay time Fall time Gate Charge Characteristics Gate to source charge Gate to drain charge Switching charge Gate charge total Gate plateau voltage Output ...
Page 4
Power dissipation P =f(T ) tot C 180 150 120 Safe operating area I =f =25 ° parameter limited by ...
Page 5
Typ. output characteristics I =f =25 ° parameter 360 320 280 240 200 6 V 160 120 5 4 ...
Page 6
Drain-source on-state resistance =10 V DS(on -60 - Typ. capacitances C =f ...
Page 7
Avalanche characteristics parameter: T j(start) 100 Drain-source breakdown voltage V =f BR(DSS ...
Page 8
PG-TO252-3 (D-Pak) Rev. 1.0 page 8 IPD053N08N3 G 2008-01-25 ...
Page 9
... Infineon Technologies Office. Infineon Technologies components may be used in life-support devices or systems only with the express written approval of Infineon Technologies failure of such components can reasonably be expected to cause the failure of that life-support device or system or to affect the safety or effectiveness of that device or system ...