IPD053N08N3G Infineon Technologies, IPD053N08N3G Datasheet - Page 4

• Manufacturer Part Number: IPD053N08N3G
• Description: OptiMOS Power-Transistor
• Manufacturer: Infineon Technologies

Rev. 1.0
1 Power dissipation
P
3 Safe operating area
I
parameter: t
D
tot
=f(V
=f(T
180
150
120
10
10
10
10
90
60
30
DS
0
3
2
1
0
C
10
0
); T
)
-1
C
p
=25 °C; D =0
limited by on-state
resistance
50
10
0
T
V
C
DS
100
[°C]
[V]
10
DC
1
10 ms
150
1 ms
100 µs
10 µs
1 µs
200
10
page 4
2
2 Drain current
I
4 Max. transient thermal impedance
Z
parameter: D =t
D
thJC
=f(T
100
=f(t
10
10
10
10
80
60
40
20
C
0
-1
-2
1
0
); V
10
p
0
)
0.02
0.01
-5
0.05
0.2
0.5
0.1
GS
single pulse
≥10 V
p
10
/T
-4
50
10
-3
T
t
C
100
p
[°C]
[s]
10
-2
IPD053N08N3 G
150
10
-1
2008-01-25
200
10
0