IPD053N08N3G Infineon Technologies, IPD053N08N3G Datasheet - Page 5

• Manufacturer Part Number: IPD053N08N3G
• Description: OptiMOS Power-Transistor
• Manufacturer: Infineon Technologies

Rev. 1.0
5 Typ. output characteristics
I
parameter: V
7 Typ. transfer characteristics
I
parameter: T
D
D
=f(V
=f(V
360
320
280
240
200
160
120
180
150
120
80
40
90
60
30
DS
GS
0
0
); T
0
0
); |V
j
=25 °C
j
GS
DS
|>2|I
1
10 V
2
D
|R
8 V
DS(on)max
4.5 V
6 V
5.5 V
5 V
7 V
2
V
V
175 °C
6.5 V
GS
DS
4
[V]
[V]
3
25 °C
6
4
page 5
5
8
6 Typ. drain-source on resistance
R
parameter: V
8 Typ. forward transconductance
g
fs
DS(on)
=f(I
160
120
20
16
12
80
40
D
=f(I
8
4
0
0
); T
0
0
D
4.5 V
j
); T
=25 °C
GS
j
=25 °C
40
40
5 V
I
I
D
D
80
80
[A]
[A]
IPD053N08N3 G
5.5 V
120
120
6.5 V
8 V
6 V
7 V
10 V
2008-01-25
160
160