IPD053N08N3G Infineon Technologies, IPD053N08N3G Datasheet - Page 7

• Manufacturer Part Number: IPD053N08N3G
• Description: OptiMOS Power-Transistor
• Manufacturer: Infineon Technologies

Rev. 1.0
13 Avalanche characteristics
I
parameter: T
15 Drain-source breakdown voltage
V
AS
BR(DSS)
=f(t
100
10
90
85
80
75
70
65
60
AV
1
-60
0.1
=f(T
); R
j
GS
); I
j(start)
-20
=25
D
=1 mA
1
20
t
T
AV
j
60
10
[°C]
[µs]
100
25 °C
100 °C
150 °C
100
140
1000
180
page 7
14 Typ. gate charge
V
parameter: V
16 Gate charge waveforms
GS
=f(Q
Q
V
12
10
V
8
6
4
2
0
g(th)
g s(th)
GS
0
gate
); I
DD
Q
D
=90 A pulsed
g s
20
Q
Q
gate
g
Q
sw
[nC]
Q
g d
IPD053N08N3 G
40
20 V
40 V
60 V
Q
g ate
2008-01-25
60