IPD082N10N3G Infineon Technologies, IPD082N10N3G Datasheet

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IPD082N10N3G

Manufacturer Part Number
IPD082N10N3G
Description
Power-Transistor
Manufacturer
Infineon Technologies
Datasheet

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Part Number:
IPD082N10N3G
Manufacturer:
INFINEON
Quantity:
12 500
Part Number:
IPD082N10N3G
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Company:
Part Number:
IPD082N10N3G
Quantity:
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www.DataSheet.co.kr
Rev. 2.5
1)
2)
Features
• N-channel, normal level
• Excellent gate charge x R
• Very low on-resistance R
• 175 °C operating temperature
• Pb-free lead plating; RoHS compliant
• Qualified according to JEDEC
• Ideal for high-frequency switching and synchronous rectification
• Halogen-free according to IEC61249-2-21 *
Maximum ratings, at T
Parameter
Continuous drain current
Pulsed drain current
Avalanche energy, single pulse
Gate source voltage
Power dissipation
Operating and storage temperature
IEC climatic category; DIN IEC 68-1
OptiMOS
Type
Package
Marking
* Excep D-PAK ( TO-252-3 )
J-STD20 and JESD22
See figure 3
3 Power-Transistor
IPP086N10N3 G
PG-TO220-3
086N10N
2)
j
=25 °C, unless otherwise specified
DS(on)
DS(on)
1)
product (FOM)
for target application
Symbol Conditions
I
I
E
V
P
T
D
D,pulse
AS
GS
tot
j
, T
IPI086N10N3 G
PG-TO262-3
086N10N
stg
T
T
T
I
T
D
page 1
C
C
C
C
=73 A, R
=25 °C
=100 °C
=25 °C
=25 °C
2)
GS
=25 Ω
Product Summary
V
R
I
IPB083N10N3 G
PG-TO263-3
083N10N
D
DS
DS(on),max (TO 252)
IPP086N10N3 G
IPB083N10N3 G
-55 ... 175
55/175/56
Value
320
110
125
±20
80
58
IPD082N10N3 G
PG-TO252-3
082N10N
IPD082N10N3 G
IPI086N10N3 G
100
8.2
80
Unit
A
mJ
V
W
°C
V
mΩ
A
2010-07-16
Datasheet pdf - http://www.DataSheet4U.net/

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