IPD088N06N3G Infineon Technologies, IPD088N06N3G Datasheet

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IPD088N06N3G

Manufacturer Part Number
IPD088N06N3G
Description
Power-Transistor
Manufacturer
Infineon Technologies
Datasheet

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Part Number:
IPD088N06N3G
Manufacturer:
INFINEON
Quantity:
12 500
www.DataSheet.co.kr
Rev. 2.0
1)
2)
3)
4)
Type
Features
• Ideal for high frequency switching and sync. rec.
• Optimized technology for DC/DC converters
• Excellent gate charge x R
• Very low on-resistance R
• N-channel, normal level
• 100% avalanche tested
• Pb-free plating; RoHS compliant
• Qualified according to JEDEC
Maximum ratings, at T
Parameter
Continuous drain current
Pulsed drain current
Avalanche energy, single pulse
Gate source voltage
Power dissipation
Operating and storage temperature
IEC climatic category; DIN IEC 68-1
OptiMOS
Type
Package
Marking
J-STD20 and JESD22
Current is limited by bondwire; with an R
See figure 3 for more detailed information
See figure 13 for more detailed information
(TM)
3 Power-Transistor
IPD088N06N3 G
PG-TO252-3
088N06N
3)
j
=25 °C, unless otherwise specified
DS(on)
DS(on)
1)
4)
product (FOM)
for target applications
thJC
Symbol Conditions
I
I
E
V
P
T
D
D,pulse
AS
GS
tot
j
=2.1 K/W the chip is able to carry 67 A.
, T
stg
T
T
T
I
T
D
page 1
C
C
C
C
=50 A, R
=25 °C
=100 °C
=25 °C
=25 °C
2)
GS
=25 Ω
Product Summary
V
R
I
D
DS
DS(on),max
-55 ... 175
55/175/56
Value
200
±20
50
47
43
71
IPD088N06N3 G
8.8
60
50
Unit
A
mJ
V
W
°C
V
mΩ
A
2008-11-26
Datasheet pdf - http://www.DataSheet4U.net/

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IPD088N06N3G Summary of contents

Page 1

Type OptiMOS (TM) 3 Power-Transistor Features • Ideal for high frequency switching and sync. rec. • Optimized technology for DC/DC converters • Excellent gate charge x R • Very low on-resistance R • N-channel, normal level • 100% avalanche ...

Page 2

Parameter Thermal characteristics Thermal resistance, junction - case Thermal resistance, junction - ambient Electrical characteristics Static characteristics Drain-source breakdown voltage Gate threshold voltage Zero gate voltage drain current Gate-source leakage current Drain-source on-state resistance Gate resistance Transconductance ...

Page 3

Parameter Dynamic characteristics Input capacitance Output capacitance Reverse transfer capacitance Turn-on delay time Rise time Turn-off delay time Fall time Gate Charge Characteristics Gate to source charge Gate to drain charge Switching charge Gate charge total Gate plateau voltage ...

Page 4

Power dissipation P =f(T ) tot Safe operating area I =f =25 ° parameter ...

Page 5

Typ. output characteristics I =f =25 ° parameter 200 10 V 180 160 140 120 100 Typ. transfer characteristics I =f ...

Page 6

Drain-source on-state resistance DS(on -60 -20 11 Typ. capacitances C =f MHz ...

Page 7

Avalanche characteristics =25 Ω parameter: T j(start) 100 Drain-source breakdown voltage V =f BR(DSS -60 ...

Page 8

PG-TO252 (D-Pak) Rev. 2.0 page 8 IPD088N06N3 G 2008-11-26 Datasheet pdf - http://www.DataSheet4U.net/ ...

Page 9

... Infineon Technologies Office. Infineon Technologies components may be used in life-support devices or systems only with the express written approval of Infineon Technologies failure of such components can reasonably be expected to cause the failure of that life-support device or system or to affect the safety or effectiveness of that device or system ...

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