IPD09N03L Infineon Technologies AG, IPD09N03L Datasheet
IPD09N03L
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IPD09N03L Summary of contents
Page 1
... IEC climatic category; DIN IEC 68-1 product (FOM) DS(on) Ordering Code Symbol puls jmax dv/dt =175°C jmax tot Page 1 IPD09N03L Product Summary DS(on TO252 -3-11 Marking 09N03L Value 30 30 120 150 10 6 ±20 100 T -55... +175 stg 55/175/56 2002-01-17 ...
Page 2
... Device on 40mm*40mm*1.5mm epoxy PCB FR4 with 6cm² (one layer, 70 µm thick) copper area for drain connection. PCB is vertical without blown air. Symbol R thJC R thJA R thJA = 25 °C, unless otherwise specified j Symbol V (BR)DSS = GS(th) I DSS I GSS R DS(on) R DS(on) = 1.5K/W the chip is able to carry I thJC Page 2 IPD09N03L Values Unit min. typ. max 1.5 K 100 - - Values Unit min. typ. max 1.2 1 ...
Page 3
... DS D oss V = (plateau) V =15V, I =15A =25° =0V, I =30A =- /dt=100A/µ Page 3 IPD09N03L Values Unit min. typ. max. 23.8 47 1160 1550 pF - 450 600 - 120 175 - 1 7.4 11 28.4 42.6 - 7.6 11 9.2 12 ...
Page 4
... IPD09N03L 10 K 10.0µ 100 µ Page 4 IPD09N03L ) 100 120 140 160 ) 0.50 single pulse - 2002-01-17 °C 190 T C 0.20 ...
Page 5
... Typ. forward transconductance g = f(I DS(on)max fs parameter 3 Page 5 IPD09N03L = IPD09N03L [ 3.5 4.0 4.5 5.0 5 =25° 2002-01- ...
Page 6
... C rss Page 6 IPD09N03L = 500µA 50µ -60 - 100 ) µs p IPD09N03L °C typ 175 °C typ °C (98 175 °C (98 0.4 0.8 1.2 1.6 2 2002-01-17 °C 180 ...
Page 7
... DS max 0 max 2 0 max Drain-source breakdown voltage V (BR)DSS = 25 parameter °C 125 145 185 Gate Page 7 IPD09N03L = = IPD09N03L -60 - 100 140 2002-01-17 °C 200 T j ...
Page 8
... Life support devices or systems are intended to be implanted in the human body support and/or maintain and sustain and/or protect human life. If they fail reasonable to assume that the health of the user or other persons may be endangered. Page 8 IPD09N03L 2002-01-17 ...