IPB034N03LG Infineon Technologies AG, IPB034N03LG Datasheet

no-image

IPB034N03LG

Manufacturer Part Number
IPB034N03LG
Description
OptiMOS3 Power-Transistor
Manufacturer
Infineon Technologies AG
Datasheet
www.DataSheet4U.com
Rev. 2.0
1)
Type
OptiMOS
Features
• Fast switching MOSFET for SMPS
• Optimized technology for DC/DC converters
• Qualified according to JEDEC
• N-channel, logic level
• Excellent gate charge x R
• Very low on-resistance R
• Avalanche rated
• Pb-free plating; RoHS compliant
• Halogen-free according to IEC61249-2-21
Maximum ratings, at T
Parameter
Continuous drain current
Pulsed drain current
Avalanche current, single pulse
Avalanche energy, single pulse
Reverse diode dv /dt
Gate source voltage
Type
Package
Marking
J-STD20 and JESD22
3 Power-Transistor
IPP034N03L G
PG-TO220-3-1
034N03L
2)
j
=25 ° C, unless otherwise specified
DS(on)
DS(on)
1)
3)
product (FOM)
for target applications
Symbol Conditions
I
I
I
E
dv /dt
V
D
D,pulse
AS
AS
GS
IPB034N03L G
PG-TO263-3
034N03L
V
V
V
V
T
T
T
I
I
di /dt =200 A/µs,
T
D
D
page 1
C
C
C
j,max
GS
GS
GS
GS
=80 A, R
=80 A, V
=100 ° C
=25 ° C
=25 ° C
=10 V, T
=10 V, T
=4.5 V, T
=4.5 V,
=175 ° C
DS
GS
C
C
=24 V,
Product Summary
V
R
I
=25
C
=25 ° C
=100 ° C
D
=25 ° C
DS
DS(on),max
Value
400
±20
80
80
80
77
80
70
6
IPB034N03L G
IPP034N03L G
3.4
30
80
Unit
A
mJ
kV/µs
V
V
m
A
2010-02-19

Related parts for IPB034N03LG

IPB034N03LG Summary of contents

Page 1

Type ™ OptiMOS 3 Power-Transistor Features • Fast switching MOSFET for SMPS • Optimized technology for DC/DC converters • Qualified according to JEDEC • N-channel, logic level • Excellent gate charge x R • Very low on-resistance R • Avalanche ...

Page 2

Maximum ratings Parameter Power dissipation Operating and storage temperature IEC climatic category; DIN IEC 68-1 Parameter Thermal characteristics Thermal resistance, junction - case SMD version, device on PCB Electrical characteristics Static characteristics Drain-source breakdown voltage Gate ...

Page 3

Parameter Dynamic characteristics Input capacitance Output capacitance Reverse transfer capacitance Turn-on delay time Rise time Turn-off delay time Fall time Gate Charge Characteristics Gate to source charge Gate charge at threshold Gate to drain charge Switching charge Gate charge total ...

Page 4

Power dissipation P =f(T ) tot C 100 Safe operating area I =f =25 ° parameter limited by on-state ...

Page 5

Typ. output characteristics I =f =25 ° parameter 160 120 Typ. transfer characteristics I =f |>2|I ...

Page 6

Drain-source on-state resistance DS(on -60 -20 11 Typ. capacitances C =f MHz DS GS ...

Page 7

Avalanche characteristics parameter: T j(start) 100 Drain-source breakdown voltage V =f BR(DSS ...

Page 8

Package Outline Footprint: www.DataSheet4U.com Rev. 2.0 PG-TO220-3-1 Packaging: page 8 IPP034N03L G IPB034N03L G 2010-02-19 ...

Page 9

Package Outline www.DataSheet4U.com Rev. 2.0 PG-TO263-3 page 9 IPP034N03L G IPB034N03L G 2010-02-19 ...

Page 10

... Infineon Technologies AG 81726 München, Germany 81726 München, Germany 81726 München, Germany 81726 München, Germany © Infineon Technologies AG 2006. © Infineon Technologies AG 2006. © Infineon Technologies AG 2006. © Infineon Technologies AG 2006. All Rights Reserved. All Rights Reserved. All Rights Reserved. All Rights Reserved. ...

Related keywords