IPB034N03LG

Manufacturer Part NumberIPB034N03LG
DescriptionOptiMOS3 Power-Transistor
ManufacturerInfineon Technologies AG
IPB034N03LG datasheet
 
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Type
OptiMOS
3 Power-Transistor
Features
• Fast switching MOSFET for SMPS
• Optimized technology for DC/DC converters
• Qualified according to JEDEC
• N-channel, logic level
• Excellent gate charge x R
• Very low on-resistance R
• Avalanche rated
• Pb-free plating; RoHS compliant
• Halogen-free according to IEC61249-2-21
Type
IPP034N03L G
Package
PG-TO220-3-1
Marking
034N03L
Maximum ratings, at T
Parameter
Continuous drain current
2)
Pulsed drain current
Avalanche current, single pulse
www.DataSheet4U.com
Avalanche energy, single pulse
Reverse diode dv /dt
Gate source voltage
1)
J-STD20 and JESD22
Rev. 2.0
1)
for target applications
product (FOM)
DS(on)
DS(on)
IPB034N03L G
PG-TO263-3
034N03L
=25 ° C, unless otherwise specified
j
Symbol Conditions
I
V
=10 V, T
D
GS
V
=10 V, T
GS
V
=4.5 V, T
GS
V
=4.5 V,
GS
T
=100 ° C
C
I
T
=25 ° C
D,pulse
C
3)
I
T
=25 ° C
AS
C
E
I
=80 A, R
AS
D
GS
I
=80 A, V
D
DS
dv /dt
di /dt =200 A/µs,
T
=175 ° C
j,max
V
GS
page 1
IPP034N03L G
IPB034N03L G
Product Summary
V
30
DS
R
3.4
DS(on),max
I
80
D
Value
=25 ° C
80
C
=100 ° C
80
C
=25 ° C
80
C
77
400
80
=25
70
=24 V,
6
±20
V
m
A
Unit
A
mJ
kV/µs
V
2010-02-19

IPB034N03LG Summary of contents

  • Page 1

    Type ™ OptiMOS 3 Power-Transistor Features • Fast switching MOSFET for SMPS • Optimized technology for DC/DC converters • Qualified according to JEDEC • N-channel, logic level • Excellent gate charge x R • Very low on-resistance R • Avalanche ...

  • Page 2

    Maximum ratings Parameter Power dissipation Operating and storage temperature IEC climatic category; DIN IEC 68-1 Parameter Thermal characteristics Thermal resistance, junction - case SMD version, device on PCB Electrical characteristics Static characteristics Drain-source breakdown voltage Gate ...

  • Page 3

    Parameter Dynamic characteristics Input capacitance Output capacitance Reverse transfer capacitance Turn-on delay time Rise time Turn-off delay time Fall time Gate Charge Characteristics Gate to source charge Gate charge at threshold Gate to drain charge Switching charge Gate charge total ...

  • Page 4

    Power dissipation P =f(T ) tot C 100 Safe operating area I =f =25 ° parameter limited by on-state ...

  • Page 5

    Typ. output characteristics I =f =25 ° parameter 160 120 Typ. transfer characteristics I =f |>2|I ...

  • Page 6

    Drain-source on-state resistance DS(on -60 -20 11 Typ. capacitances C =f MHz DS GS ...

  • Page 7

    Avalanche characteristics parameter: T j(start) 100 Drain-source breakdown voltage V =f BR(DSS ...

  • Page 8

    Package Outline Footprint: www.DataSheet4U.com Rev. 2.0 PG-TO220-3-1 Packaging: page 8 IPP034N03L G IPB034N03L G 2010-02-19 ...

  • Page 9

    Package Outline www.DataSheet4U.com Rev. 2.0 PG-TO263-3 page 9 IPP034N03L G IPB034N03L G 2010-02-19 ...

  • Page 10

    ... Infineon Technologies AG 81726 München, Germany 81726 München, Germany 81726 München, Germany 81726 München, Germany © Infineon Technologies AG 2006. © Infineon Technologies AG 2006. © Infineon Technologies AG 2006. © Infineon Technologies AG 2006. All Rights Reserved. All Rights Reserved. All Rights Reserved. All Rights Reserved. ...