IPB034N03LG Infineon Technologies AG, IPB034N03LG Datasheet - Page 2

• Manufacturer Part Number: IPB034N03LG
• Description: OptiMOS3 Power-Transistor
• Manufacturer: Infineon Technologies AG

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Rev. 2.0
2)
3)
4)
connection. PCB is vertical in still air.
5)
Maximum ratings, at T
Parameter
Power dissipation
Operating and storage temperature
IEC climatic category; DIN IEC 68-1
Parameter
Thermal characteristics
Thermal resistance, junction - case
SMD version, device on PCB
Electrical characteristics, at T
Static characteristics
Drain-source breakdown voltage
Gate threshold voltage
Zero gate voltage drain current
Gate-source leakage current
Drain-source on-state resistance
Gate resistance
Transconductance
See figure 3 for more detailed information
See figure 13 for more detailed information
Device on 40 mm x 40 mm x 1.5 mm epoxy PCB FR4 with 6 cm2 (one layer, 70 µm thick) copper area for drain
Measured from drain tab to source pin
j
=25 ° C, unless otherwise specified
j
=25 ° C, unless otherwise specified
5)
Symbol Conditions
P
T
Symbol Conditions
R
R
V
V
I
I
R
R
g
DSS
GSS
fs
j
tot
(BR)DSS
GS(th)
, T
thJC
thJA
DS(on)
G
stg
T
minimal footprint
6 cm² cooling area
V
V
V
T
V
T
V
V
V
|V
I
D
page 2
C
j
j
GS
DS
DS
DS
GS
GS
GS
=25 ° C
=125 ° C
=30 A
DS
=25 ° C
=V
=30 V, V
=30 V, V
=0 V, I
=20 V, V
=4.5 V, I
=10 V, I
|>2|I
GS
, I
D
|R
D
D
=1 mA
D
=250 µA
D
GS
GS
DS
DS(on)max
=30 A
=30 A
=0 V,
=0 V,
=0 V
4)
,
min.
30
50
1
-
-
-
-
-
-
-
-
-
-55 ... 175
55/175/56
Values
Value
typ.
100
0.1
3.8
2.8
1.6
94
10
10
-
-
-
-
-
IPB034N03L G
IPP034N03L G
max.
100
100
1.6
2.2
4.7
3.4
62
40
1
-
-
-
Unit
W
° C
Unit
K/W
V
µA
nA
m
S
2010-02-19