IPB034N03LG Infineon Technologies AG, IPB034N03LG Datasheet - Page 6

• Manufacturer Part Number: IPB034N03LG
• Description: OptiMOS3 Power-Transistor
• Manufacturer: Infineon Technologies AG

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Rev. 2.0
9 Drain-source on-state resistance
R
11 Typ. capacitances
C =f(V
DS(on)
10
10
10
10
4
3
2
1
DS
=f(T
7
6
5
4
3
2
1
0
10000
1000
100
0
10
-60
); V
j
); I
GS
D
=0 V; f =1 MHz
5
-20
=30 A; V
98 %
10
20
GS
V
=10 V
T
DS
15
j
60
[°C]
typ
Coss
Ciss
[V]
Crss
100
20
140
25
180
page 6
30
10 Typ. gate threshold voltage
V
12 Forward characteristics of reverse diode
I
parameter: T
F
GS(th)
=f(V
1000
100
2.5
1.5
0.5
10
=f(T
SD
2
1
0
1
-60
0.0
)
j
); V
j
-20
GS
175 ° C
=V
0.5
DS
20
; I
D
=250 µA
25 ° C
V
T
SD
j
1.0
60
[°C]
[V]
25 ° C, 98%
100
IPB034N03L G
IPP034N03L G
1.5
140
175 ° C, 98%
2010-02-19
180
2.0