SPD02N60 Siemens Semiconductor Group, SPD02N60 Datasheet
SPD02N60
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SPD02N60 Summary of contents
Page 1
... Semiconductor Group Preliminary data DS(on 5.5 GS Symbol Dpulse tot stg 1 SPD02N60 SPU02N60 Pin 1 Pin Package Ordering Code P-TO252 Q67040-S4133 P-TO251 Q67040-S4127-A2 Value 2 1.3 8 135 20 55 -55 ... +150 -55 ... +150 55/150/56 Pin 3 S Unit °C ...
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... Device on 50mm*50mm*1.5mm epoxy PCB FR4 with 6 cm2 (one layer, 70µm thick) copper area for drain connection. PCB is vertical without blown air. Semiconductor Group Preliminary data Symbol R thJC R thJA R thJA V (BR)DSS = GS(th) I DSS = 25 ° 150 ° GSS R DS(on) 2 SPD02N60 SPU02N60 Values Unit min. typ. max. - 2.25 K/W - 100 - - tbd - 600 - - V 2 µA - ...
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... Semiconductor Group Preliminary data Symbol 1 d(on d(off Values min. typ. max. 1 1.8 - 350 iss - 40 oss - 15 rss - SPD02N60 SPU02N60 Unit - S 460 1998 ...
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... 100 A/µ Reverse recovery charge V = 100 100 A/µ Semiconductor Group Preliminary data Symbol min SPD02N60 SPU02N60 Values Unit typ. max 0.85 1.4 V 300 450 ns 2.3 3.45 µ 1998 ...
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... 30.0µs 10 K/W 100 µ SPD02N60 SPU02N60 ) SPD02N60 100 120 ) SPD02N60 single pulse - °C 160 0.50 0.20 0.10 0.05 0.02 0. 1998 ...
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... Semiconductor Group Preliminary data Drain-source on-resistance DS(on) parameter : I SPD02N60 [ 6 7 SPD02N60 SPU02N60 ) 98% typ - 100 ° 1998 180 j ...
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... C oss - rss - 0 SPD02N60 SPU02N60 = - 100 ) µs p SPD02N60 °C typ 150 °C typ °C (98 150 °C (98%) j 0.4 0.8 1.2 1.6 2.0 max typ min V 160 2.4 3 1998 ...
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... Semiconductor Group Preliminary data = Drain-source breakdown voltage (BR)DSS 720 V 680 660 640 620 600 580 560 540 100 120 °C 160 - SPD02N60 SPU02N60 = SPD02N60 - 100 °C 180 1998 ...
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... If they fail reasonable to assume that the health of the user or other persons may be endangered. Semiconductor Group Preliminary data 9 SPD02N60 SPU02N60 10 / 1998 ...