ATP106 Sanyo Semicon Device, ATP106 Datasheet

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ATP106

Manufacturer Part Number
ATP106
Description
P-Channel Silicon MOSFET General-Purpose Switching Device Applications
Manufacturer
Sanyo Semicon Device
Datasheet

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
ATP106
Manufacturer:
ON/安森美
Quantity:
20 000
Part Number:
ATP106-TL-H
Manufacturer:
ON Semiconductor
Quantity:
1 850
Ordering number : ENA1597
ATP106
Features
Specifi cations
Absolute Maximum Ratings at Ta=25°C
Electrical Characteristics at Ta=25°C
Marking : ATP106
Note : *1 V DD =--10V, L=200 μ H, I AV =- -15A
Drain-to-Source Voltage
Gate-to-Source Voltage
Drain Current (DC)
Drain Current (PW≤10μs)
Allowable Power Dissipation
Channel Temperature
Storage Temperature
Avalanche Energy (Single Pulse) *1
Avalanche Current *2
Drain-to-Source Breakdown Voltage
Zero-Gate Voltage Drain Current
Gate-to-Source Leakage Current
Low ON-resistance.
Large current.
Slim package.
4.5V drive.
Halogen free compliance.
*2 L ≤ 200 μ H, Single pulse
"standard application", intended for the use as general electronics equipment (home appliances, AV equipment,
Any and all SANYO Semiconductor Co.,Ltd. products described or contained herein are, with regard to
communication device, office equipment, industrial equipment etc.). The products mentioned herein shall not
be intended for use for any "special application" (medical equipment whose purpose is to sustain life,
aerospace instrument, nuclear control device, burning appliances, transportation machine, traffic signal
system, safety equipment etc.) that shall require extremely high level of reliability and can directly threaten
human lives in case of failure or malfunction of the product or may cause harm to human bodies, nor shall they
grant any guarantee thereof. If you should intend to use our products for applications outside the standard
applications of our customer who is considering such use and/or outside the scope of our intended standard
applications, please consult with us prior to the intended use. If there is no consultation or inquiry before the
intended use, our customer shall be solely responsible for the use.
Specifications of any and all SANYO Semiconductor Co.,Ltd. products described or contained herein stipulate
the performance, characteristics, and functions of the described products in the independent state, and are
not guarantees of the performance, characteristics, and functions of the described products as mounted in the
customer ' s products or equipment. To verify symptoms and states that cannot be evaluated in an
independent device, the customer should always evaluate and test devices mounted in the customer ' s
products or equipment.
Parameter
Parameter
P-Channel Silicon MOSFET
General-Purpose Switching Device
Applications
V DSS
V GSS
I D
I DP
P D
Tch
Tstg
E AS
I AV
V (BR)DSS
I DSS
I GSS
Symbol
Symbol
www.semiconductor-sanyo.com/network
SANYO Semiconductors
PW≤10μs, duty cycle≤1%
Tc=25°C
I D =- -1mA, V GS =0V
V DS =--40V, V GS =0V
V GS =±16V, V DS =0V
ATP106
Conditions
Conditions
N0409PA TK IM TC-00002145
DATA SHEET
min
--40
Ratings
typ
www.DataSheet4U.com
Ratings
Continued on next page.
--55 to +150
max
--40
±20
--30
--90
--15
±10
150
40
30
- -1
No. A1597-1/4
Unit
Unit
mJ
°C
°C
μA
μA
W
A
A
A
V
V
V

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ATP106 Summary of contents

Page 1

... Drain-to-Source Breakdown Voltage Zero-Gate Voltage Drain Current Gate-to-Source Leakage Current Marking : ATP106 Any and all SANYO Semiconductor Co.,Ltd. products described or contained herein are, with regard to "standard application", intended for the use as general electronics equipment (home appliances, AV equipment, communication device, office equipment, industrial equipment etc.). The products mentioned herein shall not be intended for use for any " ...

Page 2

... V DS =--20V -10V =--30A Qgs V DS =--20V =--10V =--30A Qgd V DS =--20V =--10V =--30A =--30A =0V 1.5 4.6 2.6 0.4 0 Gate 0 Drain 3 : Source 4 : Drain SANYO : ATPAK V OUT ATP106 www.DataSheet4U.com Ratings Unit min typ max - -1.5 --2 mΩ mΩ 1380 ...

Page 3

... Drain Current Time -- I D 1000 --20V --10V 100 (on --0.1 --1.0 --10 Drain Current ATP106 -- --10V --45 Single pulse --40 --35 --30 --25 --20 --15 --10 -- --1.6 --1.8 --2.0 0 --0.5 IT15122 60 Tc=25 ° Single pulse 50 45 ...

Page 4

... Case Temperature °C Note on usage : Since the ATP106 is a MOSFET product, please avoid using this device in the vicinity of highly charged objects. SANYO Semiconductor Co.,Ltd. assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all SANYO Semiconductor Co ...

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