ATP207 Sanyo Semicon Device, ATP207 Datasheet
ATP207
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ATP207 Summary of contents
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... Drain-to-Source Breakdown Voltage Zero-Gate Voltage Drain Current Gate-to-Source Leakage Current Marking : ATP207 Any and all SANYO Semiconductor Co.,Ltd. products described or contained herein are, with regard to "standard application", intended for the use as general electronics equipment (home appliances, AV equipment, communication device, office equipment, industrial equipment etc.). The products mentioned herein shall not be intended for use for any " ...
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... V DS =20V =10V =65A Qgd V DS =20V =10V =65A =65A =0V 1.5 4.6 2.6 0.4 0.4 0. Gate 0 Drain 3 : Source 4 : Drain SANYO : ATPAK I D =33A R L =0.61Ω V OUT ATP207 S Ratings Unit min typ max 1.5 2 9.1 mΩ 11 15.5 mΩ 2710 ...
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... Drain Current Time -- I D 1000 V DD =20V =10V 100 0.1 1.0 Drain Current ATP207 Tc=25 ° C Single pulse 1.0 1.5 2.0 IT14023 Tc=25 ° C Single pulse IT14025 =0V Single pulse ...
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... Case Temperature °C Note on usage : Since the ATP207 is a MOSFET product, please avoid using this device in the vicinity of highly charged objects. SANYO Semiconductor Co.,Ltd. assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all SANYO Semiconductor Co ...