ATP212 Sanyo Semicon Device, ATP212 Datasheet

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ATP212

Manufacturer Part Number
ATP212
Description
N-Channel Silicon MOSFET
Manufacturer
Sanyo Semicon Device
Datasheet

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
ATP212-TL-H
Manufacturer:
ON Semiconductor
Quantity:
2 050
www.DataSheet.co.kr
Ordering number : ENA1507
ATP212
Features
Specifi cations
Absolute Maximum Ratings at Ta=25°C
Electrical Characteristics at Ta=25°C
Marking : ATP212
Note : *1 V DD =10V, L=100 μ H, I AV =18A
Drain-to-Source Voltage
Gate-to-Source Voltage
Drain Current (DC)
Drain Current (PW≤10μs)
Allowable Power Dissipation
Channel Temperature
Storage Temperature
Avalanche Energy (Single Pulse) *1
Avalanche Current *2
Drain-to-Source Breakdown Voltage
Zero-Gate Voltage Drain Current
Gate-to-Source Leakage Current
Low ON-resistance.
Large current.
Slim package.
4V drive.
Halogen free compliance.
*2 L ≤ 100 μ H, Single pulse
"standard application", intended for the use as general electronics equipment (home appliances, AV equipment,
Any and all SANYO Semiconductor Co.,Ltd. products described or contained herein are, with regard to
communication device, office equipment, industrial equipment etc.). The products mentioned herein shall not
be intended for use for any "special application" (medical equipment whose purpose is to sustain life,
aerospace instrument, nuclear control device, burning appliances, transportation machine, traffic signal
system, safety equipment etc.) that shall require extremely high level of reliability and can directly threaten
human lives in case of failure or malfunction of the product or may cause harm to human bodies, nor shall they
grant any guarantee thereof. If you should intend to use our products for applications outside the standard
applications of our customer who is considering such use and/or outside the scope of our intended standard
applications, please consult with us prior to the intended use. If there is no consultation or inquiry before the
intended use, our customer shall be solely responsible for the use.
Specifications of any and all SANYO Semiconductor Co.,Ltd. products described or contained herein stipulate
the performance, characteristics, and functions of the described products in the independent state, and are
not guarantees of the performance, characteristics, and functions of the described products as mounted in the
customer ' s products or equipment. To verify symptoms and states that cannot be evaluated in an
independent device, the customer should always evaluate and test devices mounted in the customer ' s
products or equipment.
Parameter
Parameter
N-Channel Silicon MOSFET
General-Purpose Switching Device
Applications
V DSS
V GSS
I D
I DP
P D
Tch
Tstg
E AS
I AV
V (BR)DSS
I DSS
I GSS
Symbol
Symbol
www.semiconductor-sanyo.com/network
SANYO Semiconductors
PW≤10μs, duty cycle≤1%
Tc=25°C
I D =1mA, V GS =0V
V DS =60V, V GS =0V
V GS =±16V, V DS =0V
ATP212
Conditions
Conditions
62409PA TK IM TC-00001998
DATA SHEET
min
60
Ratings
typ
Ratings
Continued on next page.
--55 to +150
max
±20
105
150
±10
60
35
40
19
18
No. A1507-1/4
1
Unit
Unit
mJ
μA
μA
°C
°C
W
A
A
A
V
V
V
Datasheet pdf - http://www.DataSheet4U.net/

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ATP212 Summary of contents

Page 1

... Drain-to-Source Breakdown Voltage Zero-Gate Voltage Drain Current Gate-to-Source Leakage Current Marking : ATP212 Any and all SANYO Semiconductor Co.,Ltd. products described or contained herein are, with regard to "standard application", intended for the use as general electronics equipment (home appliances, AV equipment, communication device, office equipment, industrial equipment etc.). The products mentioned herein shall not be intended for use for any " ...

Page 2

... V DS =30V =10V =35A Qgd V DS =30V =10V =35A =35A =0V 1.5 4.6 2.6 0.4 0.4 0. Gate 0 Drain 3 : Source 4 : Drain SANYO : ATPAK I D =18A R L =1.67Ω OUT ATP212 S Ratings Unit min typ max 1.2 2 mΩ mΩ mΩ ...

Page 3

... Drain Current Time -- =30V =10V 3 2 100 0.1 1.0 Drain Current ATP212 1.0 1.2 1.4 1.6 1.8 2.0 IT14741 Tc=25 ° C Single pulse IT14743 IT14745 ...

Page 4

... Case Temperature °C Note on usage : Since the ATP212 is a MOSFET product, please avoid using this device in the vicinity of highly charged objects. SANYO Semiconductor Co.,Ltd. assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all SANYO Semiconductor Co ...

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