SPA11N60C2 Infineon Technologies, SPA11N60C2 Datasheet - Page 9

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SPA11N60C2

Manufacturer Part Number
SPA11N60C2
Description
Power Transistor
Manufacturer
Infineon Technologies
Datasheet

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17 Typ. switching losses
E = f(R
par.: V
19 Avalanche energy
E
par.: I
AS
mWs
mJ
350
250
200
150
100
= f (T
0.4
0.2
0.1
50
D
0
0
20
DS
0
G
= 5.5 A, V
*) E
commutation losses.
), inductive load, T
=380V, V
j
)
on
E
10
40
on
includes SDP06S60 diode
*
20
60
DD
GS
30
= 50 V
80
=0/+13V,I
100
40
j
=125°C
120
50
D
=11A
E
off
°C
T
R
j
G
Final data
160
70
Page 9
18 Avalanche SOA
I
par.: T
20 Drain-source breakdown voltage
V
AR
(BR)DSS
= f (t
720
680
660
640
620
600
580
560
540
A
V
11
9
8
7
6
5
4
3
2
1
0
-60
j
10
SPP11N60C2
AR
-3
SPP11N60C2, SPB11N60C2
150 °C
= f (T
)
10
-20
-2
j
)
10
T
20
j (START)
-1
=125°C
10
0
60
10
SPA11N60C2
1
100
10
2002-08-12
T
2
j (START)
°C
=25°C
t
T
µs
AR
j
180
10
4

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