IRC4BC40F International Rectifier, IRC4BC40F Datasheet
IRC4BC40F
Manufacturer Part Number
IRC4BC40F
Description
INSULATED GATE BIPOLAR TRANSISTOR
Manufacturer
International Rectifier
Datasheet
1.IRC4BC40F.pdf
(8 pages)
Benefits
Absolute Maximum Ratings
Thermal Resistance
Features
Features
www.irf.com
Features
Features
Features
• Generation 4 IGBTs offer highest efficiency available
• IGBTs optimized for specified application conditions
• Designed to be a "drop-in" replacement for equivalent
• Fast: optimized for medium operating
• Generation 4 IGBT design provides tighter
• Industry standard TO-220AB package
R
R
R
Wt
V
I
I
I
I
V
E
P
P
T
T
C
C
CM
LM
kHz in resonant mode).
Generation 3
parameter distribution and higher efficiency than
ARV
J
STG
θJC
CES
GE
D
D
θCS
θJA
industry-standard Generation 3 IR IGBTs
frequencies ( 1-5 kHz in hard switching, >20
@ T
@ T
@ T
@ T
C
C
C
C
= 25°C
= 100°C
= 25°C
= 100°C
Junction-to-Case
Case-to-Sink, Flat, Greased Surface
Junction-to-Ambient, typical socket mount
Weight
Collector-to-Emitter Breakdown Voltage
Continuous Collector Current
Continuous Collector Current
Pulsed Collector Current Q
Clamped Inductive Load Current R
Gate-to-Emitter Voltage
Reverse Voltage Avalanche Energy S
Maximum Power Dissipation
Maximum Power Dissipation
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 seconds
Mounting torque, 6-32 or M3 screw.
Parameter
Parameter
G
n-channel
300 (0.063 in. (1.6mm from case )
2.0 (0.07)
Typ.
0.50
–––
–––
E
C
10 lbf•in (1.1N•m)
-55 to + 150
TO-220AB
Max.
± 20
600
200
160
200
49
27
15
65
V
@V
CE(on) typ.
Max.
0.77
V
–––
–––
GE
80
CES
= 15V, I
= 600V
= 1.50V
C
= 27A
Units
4/17/2000
Units
g (oz)
°C/W
mJ
W
°C
V
A
V
1
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IRC4BC40F Summary of contents
Page 1
Features Features Features Features Features • Fast: optimized for medium operating frequencies ( 1-5 kHz in hard switching, >20 kHz in resonant mode). • Generation 4 IGBT design provides tighter parameter distribution and higher efficiency than Generation 3 • Industry ...
Page 2
Electrical Characteristics @ T Parameter V Collector-to-Emitter Breakdown Voltage (BR)CES Emitter-to-Collector Breakdown Voltage T V (BR)ECS ∆V Temperature Coeff. of Breakdown Voltage /∆T (BR)CES J V Collector-to-Emitter Saturation Voltage CE(ON) V Gate Threshold Voltage GE(th) ∆V /∆T Temperature Coeff. of ...
Page 3
wave : ...
Page 4
ase Tem perature (°C) C Fig Maximum Collector Current vs. Case Temperature ...
Page 5
MHz GE Cies = Cge + Cgc + Cce Cres = Cce Coes = Cce + Cgc ies ...
Page 6
150° 480V 15V Collector-to-Emitter Current (A) ...
Page 7
L 50V Driver .T 80 Note the 50V pow er s upply, pulse w idth ...
Page 8
(. 2 2 (.255 (.240 ...