IRC4BC40F

Manufacturer Part NumberIRC4BC40F
DescriptionINSULATED GATE BIPOLAR TRANSISTOR
ManufacturerInternational Rectifier
IRC4BC40F datasheet
 
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Features
Features
Features
Features
Features
• Fast: optimized for medium operating
frequencies ( 1-5 kHz in hard switching, >20
kHz in resonant mode).
• Generation 4 IGBT design provides tighter
parameter distribution and higher efficiency than
Generation 3
• Industry standard TO-220AB package
Benefits
• Generation 4 IGBTs offer highest efficiency available
• IGBTs optimized for specified application conditions
• Designed to be a "drop-in" replacement for equivalent
industry-standard Generation 3 IR IGBTs
Absolute Maximum Ratings
Parameter
V
Collector-to-Emitter Breakdown Voltage
CES
I
@ T
= 25°C
Continuous Collector Current
C
C
I
@ T
= 100°C
Continuous Collector Current
C
C
Pulsed Collector Current Q
I
CM
Clamped Inductive Load Current R
I
LM
V
Gate-to-Emitter Voltage
GE
Reverse Voltage Avalanche Energy S
E
ARV
P
@ T
= 25°C
Maximum Power Dissipation
D
C
P
@ T
= 100°C
Maximum Power Dissipation
D
C
T
Operating Junction and
J
T
Storage Temperature Range
STG
Soldering Temperature, for 10 seconds
Mounting torque, 6-32 or M3 screw.
Thermal Resistance
Parameter
R
Junction-to-Case
θJC
R
Case-to-Sink, Flat, Greased Surface
θCS
R
Junction-to-Ambient, typical socket mount
θJA
Wt
Weight
www.irf.com
C
V
CES
V
CE(on) typ.
G
@V
= 15V, I
E
GE
n-channel
TO-220AB
Max.
600
49
27
200
200
± 20
15
160
65
-55 to + 150
300 (0.063 in. (1.6mm from case )
10 lbf•in (1.1N•m)
Typ.
Max.
–––
0.77
0.50
–––
–––
80
2.0 (0.07)
–––
= 600V
= 1.50V
= 27A
C
Units
V
A
V
mJ
W
°C
Units
°C/W
g (oz)
1
4/17/2000

IRC4BC40F Summary of contents

  • Page 1

    Features Features Features Features Features • Fast: optimized for medium operating frequencies ( 1-5 kHz in hard switching, >20 kHz in resonant mode). • Generation 4 IGBT design provides tighter parameter distribution and higher efficiency than Generation 3 • Industry ...

  • Page 2

    Electrical Characteristics @ T Parameter V Collector-to-Emitter Breakdown Voltage (BR)CES Emitter-to-Collector Breakdown Voltage T V (BR)ECS ∆V Temperature Coeff. of Breakdown Voltage /∆T (BR)CES J V Collector-to-Emitter Saturation Voltage CE(ON) V Gate Threshold Voltage GE(th) ∆V /∆T Temperature Coeff. of ...

  • Page 3

    wave : ...

  • Page 4

    ase Tem perature (°C) C Fig Maximum Collector Current vs. Case Temperature ...

  • Page 5

    MHz GE Cies = Cge + Cgc + Cce Cres = Cce Coes = Cce + Cgc ies ...

  • Page 6

    150° 480V 15V Collector-to-Emitter Current (A) ...

  • Page 7

    L 50V Driver .T 80 Note the 50V pow er s upply, pulse w idth ...

  • Page 8

    (. 2 2 (.255 (.240 ...