IRC4BC40F International Rectifier, IRC4BC40F Datasheet - Page 5

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IRC4BC40F

Manufacturer Part Number
IRC4BC40F
Description
INSULATED GATE BIPOLAR TRANSISTOR
Manufacturer
International Rectifier
Datasheet
www.irf.com
Fig. 9 - Typical Switching Losses vs. Gate
4 0 0 0
3 0 0 0
2 0 0 0
1 0 0 0
2 . 6 0
2 . 5 0
2 . 4 0
2 . 3 0
2 . 2 0
2 . 1 0
0
0
1
Fig. 7 - Typical Capacitance vs.
V
V
T
I
C C
G E
J
C
V
Collector-to-Emitter Voltage
C E
= 27A
= 25°C
= 480V
= 15V
1 0
, Collector-to-Emitter Voltage (V)
R
V
Cies = Cge + Cgc + Cce
Cres = Cce
Coes = Cce + Cgc
G
GE
C
C
C
Resistance
, Gate Resistance (Ω)
ies
oe s
res
= 0V
2 0
3 0
1 0
f = 1 MHz
4 0
SHORTED
5 0
1 0 0
6 0
A
A
Fig. 10 - Typical Switching Losses vs.
0.1
1 0
2 0
1 6
1 2
1
8
4
0
-60
0
Fig. 8 - Typical Gate Charge vs.
V
I
C E
C
-40
Gate-to-Emitter Voltage
= 27A
= 400V
Junction Temperature
2 0
-20
T , Junction Temperature (°C)
Q , Total Gate Charge (nC)
J
g
0
4 0
2 0
4 0
6 0
6 0
8 0
8 0
1 0 0 1 2 0 1 4 0 1 6 0
R
V
V
I
I
I
C
C
C
G
G E
C C
1 0 0
= 54A
= 27A
= 14A
= 15V
= 480V
= 10 Ω
1 2 0
5
A
A

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