IRCZ44

Manufacturer Part NumberIRCZ44
DescriptionPower MOSFET(Vdss=60V/ Rds(on)=0.028ohm/ Id=50A)
ManufacturerInternational Rectifier
IRCZ44 datasheet
 
1
Page 1
2
Page 2
3
Page 3
4
Page 4
5
Page 5
6
Page 6
Page 1/6

Download datasheet (133Kb)Embed
Next
®
HEXFET
Power MOSFET
Dynamic dv/dt Rating
l
l
Current Sense
175°C Operating Temperature
l
Fast Switching
l
l
Ease of Paralleling
Simple Drive Requirements
l
Description
Third Generation HEXFETs from International Rectifier provide the designer with
the best combination of fast switching, ruggedized device, low on-resistance and
cost-effectiveness.
The HEXSense device provides an accurate fraction of the drain current through
the additional two leads to be used for control or protection of the device. These
devices exhibit similar electrical and thermal characteristics as their IRF-series
equivalent part numbers. The provision of a kelvin source connection effectively
eliminates problems of common source inductance when the HEXSence is
used as a fast, high-current switch in non current-sensing applications.
Absolute Maximum Ratings
Parameter
I
@ T
= 25°C
Continuous Drain Current, V
D
C
I
@ T
= 100°C
Continuous Drain Current, V
D
C
Pulsed Drain Current 
I
DM
P
@T
= 25°C
Power Dissipation
D
C
Linear Derating Factor
V
Gate-to-Source Voltage
GS
Single Pulse Avalanche Energy ‚
E
AS
Peak Diode Recovery dv/dt ƒ
dv/dt
T
Operating Junction and
J
T
Storage Temperature Range
STG
Soldering Temperature, for 10 seconds
Mounting Torque, 6-32 or M3 screw
Thermal Resistance
Parameter
R
Junction-to-Case
JC
R
Case-to-Sink, Flat, Greased Surface
CS
R
Junction-to-Ambient
JA
@ 10V
GS
@ 10V
GS
Min.
PD - 9.529B
IRCZ44
V
= 60V
DSS
R
= 0.028
DS(on)
I
= 50*A
D
TO-220 HexSense
Max.
Units
50*
A
37
210
150
W
1.0
W/°C
±20
V
30
mJ
4.5
V/ns
-55 to + 175
°C
300 (1.6mm from case)
10 lbf•in (1.1 N•m)
Typ.
Max.
Units
1.0
0.50
°C/W
62
C-13

IRCZ44 Summary of contents

  • Page 1

    ... Mounting Torque, 6- screw Thermal Resistance Parameter R Junction-to-Case JC R Case-to-Sink, Flat, Greased Surface CS R Junction-to-Ambient JA @ 10V GS @ 10V GS Min. — — — — 9.529B IRCZ44 V = 60V DSS R = 0.028 DS(on 50*A D TO-220 HexSense Max. Units 50 210 150 W 1.0 W/°C ±20 ...

  • Page 2

    ... IRCZ44 Electrical Characteristics @ T Parameter V Drain-to-Source Breakdown Voltage (BR)DSS Breakdown Voltage Temp. Coefficient (BR)DSS J R Static Drain-to-Source On-Resistance DS(ON) V Gate Threshold Voltage GS(th) g Forward Transconductance fs I Drain-to-Source Leakage Current DSS Gate-to-Source Forward Leakage I GSS Gate-to-Source Reverse Leakage Q Total Gate Charge ...

  • Page 3

    ... V , Drain-to-Source Voltage (Volts) DS Fig. 1 Typical Output Characteristics, T =25° Gate-to-Source Voltage (Volts) DS Fig. 3 Typical Transfer Characteristics IRCZ44 V , Drain-to-Source Voltage (Volts) DS Fig. 2 Typical Output Characteristics, T =175° Junction Temperature (°C) J Fig. 4 Normalized On-Resistance vs. Temperature C-15 ...

  • Page 4

    ... IRCZ44 V , Drain-to-Source Voltage (Volts) DS Fig. 5 Typical Capacitance vs. Drain-to- Source Voltage V , Source-to-Drain Voltage (Volts) SD Fig. 7 Typical Source-Drain Diode Forward Voltage C- Total Gate Charge (nC) G Fig. 6 Typical Gate Charge vs. Gate-to- Source Voltage V , Drain-to-Source Voltage (Volts) DS Fig. 8 Maximum Safe Operating Area ...

  • Page 5

    ... T , Case Temperature (°C) C Fig. 9 Maximum Drain Current vs. Case Temperature t , Rectiangular Pulse Duration (seconds) 1 Fig. 11 Maximum Effective Transient Thermal Impedance, Junction-to-Case IRCZ44 Starting T , Junction Temperature (°C) J Fig. 12c Maximum Avalanche Energy vs. Drain Current C-17 ...

  • Page 6

    ... IRCZ44 T , Junction Temperature (°C) J Fig. 15 Typical HEXSense Ratio vs. Junction Temperature V , Gate-to-Source Voltage (Volts) GS Fig. 17 Typical HEXSense Ratio vs. Gate Voltage Mechanical drawings, Appendix A Part marking information, Appendix B Test Circuit diagrams, Appendix C C- Drain Current (Amps) D Fig. 16 Typical HEXSense Ratio vs. Drain Current Fig ...