RJP30E2DPK-M0 Renesas, RJP30E2DPK-M0 Datasheet

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RJP30E2DPK-M0

Manufacturer Part Number
RJP30E2DPK-M0
Description
N-Channel Power MOSFET
Manufacturer
Renesas
Datasheet

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Part Number
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Quantity
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Part Number:
RJP30E2DPK-M0
Manufacturer:
RENESAS
Quantity:
12 500
RJP30E2DPK-M0
Silicon N Channel IGBT
High Speed Power Switching
Features
• Trench gate technology (G5H series)
• Low collector to emitter saturation voltage V
• High speed switching tf = 150 ns typ
• Low leak current I
Outline
Absolute Maximum Ratings
Collector to emitter voltage
Gate to emitter voltage
Collector current
Collector peak current
Collector dissipation
Junction to case thermal impedance
Junction temperature
Storage temperature
Notes: 1. PW ≤ 10 μs, duty cycle ≤ 1%
R07DS0348EJ0100 Rev.1.00
Apr 12, 2011
2. Tc = 25°C
RENESAS Package code: PRSS0004ZH-A
(Package name: TO-3PSG)
CES
Item
= 1 μA max
1
2
3
4
CE(sat)
= 1.7 V typ
G
ic(peak)
www.DataSheet.co.kr
Symbol
P
V
V
Tstg
C
θj-c
Ic
Tj
CES
GES
Note2
Note1
C
E
Preliminary
–55 to +150
Ratings
360
±30
200
150
2.5
35
50
1. Gate
2. Collector
3. Emitter
4. Collector (Flange)
R07DS0348EJ0100
Datasheet
Apr 12, 2011
°C/ W
Unit
(Ta = 25°C)
Page 1 of 6
°C
°C
W
V
V
A
A
Rev.1.00
Datasheet pdf - http://www.DataSheet4U.net/

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RJP30E2DPK-M0 Summary of contents

Page 1

... RJP30E2DPK-M0 Silicon N Channel IGBT High Speed Power Switching Features • Trench gate technology (G5H series) • Low collector to emitter saturation voltage V • High speed switching tf = 150 ns typ • Low leak current μA max CES Outline RENESAS Package code: PRSS0004ZH-A (Package name: TO-3PSG) ...

Page 2

... RJP30E2DPK-M0 Electrical Characteristics Item Zero gate voltage collector current Gate to emitter leak current Gate to emitter cutoff voltage Collector to emitter saturation voltage Input capacitance Output capacitance Reveres transfer capacitance Total gate charge Gate to emitter charge Gate to collector charge Switching time Notes: 3. Pulse test. ...

Page 3

... RJP30E2DPK-M0 Main Characteristics Maximum Safe Operation Area 1000 100 ° 1 shot pulse 0.01 0 Collector to Emitter Voltage V Typical Output Characteristics (2) 200 Pulse Test ° 160 9 120 Collector to Emitter Voltage V Collector to Emitter Saturation Voltage vs ...

Page 4

... RJP30E2DPK-M0 Typical Capacitance vs. Colloctor to Emitter Voltage 10000 MHz ° 1000 100 Colloctor to Emitter Voltage V Switching Characteristics (Typical) (1) 1000 t f 100 t d(off Colloctor Current I Colloctor Current I Switching Characteristics (Typical) (3) 1000 100 t d(off) t d(on) 10 ...

Page 5

... RJP30E2DPK-M0 Normalized Transient Thermal Impedance vs. Pulse Width 0.5 0.3 0.2 0.1 0.03 0.01 0.003 0.001 Switching Time Test Circuit Ic Monitor R L Vin Monitor Rg D.U.T. Vin = 15 V R07DS0348EJ0100 Rev.1.00 Apr 12, 2011 100 m Pulse Width PW (s) 10% Vin V CC www.DataSheet.co.kr Ic 10% t d(on Preliminary Tc = 25°C ...

Page 6

... RJP30E2DPK-M0 Package Dimension Package Name JEITA Package Code RENESAS Code ⎯ TO-3PSG PRSS0004ZH-A Ordering Information Orderable Part Number RJP30E2DPK-M0-T0 R07DS0348EJ0100 Rev.1.00 Apr 12, 2011 Previous Code MASS[Typ.] TO-3PSG/TO-3PSGV 3.7g 15.60 ± 0.2 13.60 φ3.2 ± 0.2 2.0 2.4 3-1.00 ± 0.2 0.60 ± 0.1 5.45 ± 0.5 5.45 ± 0.5 1.50 ± 0.2 2.825 ± 0.15 www.DataSheet.co.kr Quantity 360 pcs ...

Page 7

... Electronics product for any application categorized as "Specific" without the prior written consent of Renesas Electronics. Further, you may not use any Renesas Electronics product for any application for which it is not intended without the prior written consent of Renesas Electronics. Renesas Electronics shall not be in any way liable for any damages or losses incurred by you or third parties arising from the use of any Renesas Electronics product for an application categorized as " ...

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