RJP30K3DPP-M0 Renesas, RJP30K3DPP-M0 Datasheet

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RJP30K3DPP-M0

Manufacturer Part Number
RJP30K3DPP-M0
Description
N-Channel Power MOSFET
Manufacturer
Renesas
Datasheet

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Part Number:
RJP30K3DPP-M0
Manufacturer:
RENESAS
Quantity:
12 500
RJP30K3DPP-M0
Silicon N Channel IGBT
High Speed Power Switching
Features
 Trench gate and thin wafer technology (G6H-II series)
 Low collector to emitter saturation voltage V
 High speed switching tr = 90 ns typ, tf = 250 ns typ
 Low leak current I
 Isolated package TO-220FL
Outline
Absolute Maximum Ratings
Collector to emitter voltage
Gate to emitter voltage
Collector current
Collector peak current
Collector dissipation
Junction to case thermal impedance
Junction temperature
Storage temperature
Notes: 1. PW  10 s, duty cycle  1%
R07DS0501EJ0100 Rev.1.00
Jul 05, 2011
2. Value at Tc = 25C
RENESAS Package code: PRSS0003AF-A)
(Package name: TO-220FL)
CES
Item
= 1 A max
1
2 3
CE(sat)
= 1.1V typ
ic(peak)
www.DataSheet.co.kr
Symbol
P
G
V
V
Tstg
C
j-c
Tj
CES
GES
I
Note2
C
Note1
C
E
Preliminary
–55 to +150
Ratings
4.17
360
±30
300
150
40
30
1. Gate
2. Collector
3. Emitter
R07DS0501EJ0100
Datasheet
Jul 05, 2011
°C/W
Unit
(Ta = 25°C)
Page 1 of 6
°C
°C
W
Rev.1.00
V
V
A
A
Datasheet pdf - http://www.DataSheet4U.net/

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RJP30K3DPP-M0 Summary of contents

Page 1

... RJP30K3DPP-M0 Silicon N Channel IGBT High Speed Power Switching Features  Trench gate and thin wafer technology (G6H-II series)  Low collector to emitter saturation voltage V  High speed switching typ 250 ns typ  Low leak current A max CES  Isolated package TO-220FL ...

Page 2

... RJP30K3DPP-M0 Electrical Characteristics Item Zero gate voltage collector current Gate to emitter leak current Gate to emitter cutoff voltage Collector to emitter saturation voltage Input capacitance Output capacitance Reveres transfer capacitance Total gate charge Gate to emitter charge Gate to collector charge Switching time Notes: 3. Pulse test. ...

Page 3

... RJP30K3DPP-M0 Main Characteristics Maximum Safe Operation Area 1000 100 ° 1 shot pulse 0.01 0 Collector to Emitter Voltage V Typical Output Characteristics (2) 200 8 V 160 120 Collector to Emitter Voltage V Collector to Emitter Saturation Voltage vs. Gate to Emitter Voltage (Typical) ...

Page 4

... RJP30K3DPP-M0 Typical Capacitance vs. Colloctor to Emitter Voltage 10000 MHz 25°C 1000 100 Colloctor to Emitter Voltage V Switching Characteristics (Typical) (1) 1000 V = 150 Ω 25° 100 t d(off d(on Colloctor Current I Switching Characteristics (Typical) (3) ...

Page 5

... RJP30K3DPP-M0 Normalized Transient Thermal Impedance vs. Pulse Width 0.5 0.3 0.2 0.1 0.03 0.01 0.003 0.001 10 μ 100 μ Switching Time Test Circuit Ic Monitor R L Vin Monitor Rg D.U.T. Vin = 15 V R07DS0501EJ0100 Rev.1.00 Jul 05, 2011 θj – c(t) = γs(t) • θj – c θj – 4.17°C/ 25° ...

Page 6

... RJP30K3DPP-M0 Package Dimension Package Name JEITA Package Code RENESAS Code ⎯ TO-220FL PRSS0003AF-A 10.0 ± 0.3 2.54 ± 0.25 Ordering Information Orderable Part Number RJP30K3DPP-M0-T2 R07DS0501EJ0100 Rev.1.00 Jul 05, 2011 Previous Code MASS[Typ.] TO-220FL 1.5g 2.8 ± 0.2 3.2 ± 0.2 1.15 ± 0.2 1.15 ± 0.2 0.75 ± 0.15 0.40 ± 0.15 2.54 ± 0.25 www.DataSheet.co.kr Quantity 600 pcs Box(Tube) ...

Page 7

... Electronics product for any application categorized as "Specific" without the prior written consent of Renesas Electronics. Further, you may not use any Renesas Electronics product for any application for which it is not intended without the prior written consent of Renesas Electronics. Renesas Electronics shall not be in any way liable for any damages or losses incurred by you or third parties arising from the use of any Renesas Electronics product for an application categorized as " ...

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