PHD21N06LT Philips Semiconductors, PHD21N06LT Datasheet

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PHD21N06LT

Manufacturer Part Number
PHD21N06LT
Description
N-channel TrenchMOS transistor Logic level FET
Manufacturer
Philips Semiconductors
Datasheet

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Company
Part Number
Manufacturer
Quantity
Price
Part Number:
PHD21N06LT
Manufacturer:
NXP
Quantity:
30 000
Part Number:
PHD21N06LT
Manufacturer:
NXP/恩智浦
Quantity:
20 000
Philips Semiconductors
FEATURES
• ’Trench’ technology
• Low on-state resistance
• Fast switching
• Logic level compatible
GENERAL DESCRIPTION
N-channel enhancement mode, logic level, field-effect power transistor in a plastic envelope using ’trench’ technology.
Applications:-
• d.c. to d.c. converters
• switched mode power supplies
The PHP21N06LT is supplied in the SOT78 (TO220AB) conventional leaded package.
The PHB21N06LT is supplied in the SOT404 (D
The PHD21N06LT is supplied in the SOT428 (DPAK) surface mounting package.
PINNING
LIMITING VALUES
Limiting values in accordance with the Absolute Maximum System (IEC 134)
1 It is not possible to make connection to pin:2 of the SOT404 or SOT428 packages.
August 1999
N-channel TrenchMOS
Logic level FET
SYMBOL PARAMETER
V
V
V
V
I
I
P
T
D
DM
j
DSS
DGR
GS
GSM
D
PIN
, T
tab
1
2
3
stg
gate
drain
source
drain
DESCRIPTION
Drain-source voltage
Drain-gate voltage
Gate-source voltage
Pulsed gate-source voltage
Continuous drain current
Pulsed drain current
Total power dissipation
Operating junction and
storage temperature
1
SOT78 (TO220AB)
transistor
SYMBOL
tab
CONDITIONS
T
T
T
T
T
T
T
j
j
j
mb
mb
mb
mb
1 2 3
= 25 ˚C to 175˚C
= 25 ˚C to 175˚C; R
= 25 ˚C
= 100 ˚C
= 25 ˚C
= 25 ˚C
150˚C
2
PAK) surface mounting package.
g
1
d
s
SOT404 (D
GS
= 20 k
1
tab
2
PHP21N06LT, PHB21N06LT
2
PAK)
3
QUICK REFERENCE DATA
R
R
DS(ON)
DS(ON)
MIN.
- 55
SOT428 (DPAK)
V
70 m (V
-
-
-
-
-
-
-
-
75 m (V
I
DSS
D
Product specification
= 19 A
PHD21N06LT
= 55 V
MAX.
175
55
55
19
13
76
56
1
15
20
tab
GS
2
GS
3
= 10 V)
Rev 1.500
= 5 V)
UNIT
W
˚C
V
V
V
V
A
A
A

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