LM3S308 Luminary Micro, Inc, LM3S308 Datasheet - Page 389

• Manufacturer Part Number: LM3S308
• Description: Lm3s308 Arm Microcontroller
• Manufacturer: Luminary Micro, Inc

19.1.5
19.2
19.2.1
19.2.2
June 04, 2008
Flash Memory Characteristics
Table 19-5. Flash Memory Characteristics
a. A program/erase cycle is defined as switching the bits from 1-> 0 -> 1.
AC Characteristics
Load Conditions
Unless otherwise specified, the following conditions are true for all timing measurements. Timing
measurements are for 4-mA drive strength.
Figure 19-1. Load Conditions
Clocks
Table 19-6. Phase Locked Loop (PLL) Characteristics
a. The exact value is determined by the crystal value programmed into the XTAL field of the Run-Mode Clock Configuration
b. PLL frequency is automatically calculated by the hardware based on the XTAL field of the RCC register.
I
Parameter
Parameter
f
f
f
T
DD_DEEPSLEEP
ref_crystal
ref_ext
pll
READY
Parameter
T
PE
T
pin
T
ERASE
(RCC) register.
T
PROG
RET
ME
CYC
Parameter Name
Number of guaranteed program/erase cycles before failure
Data retention at average operating temperature of 85˚C (industrial) or 105˚C
(extended)
Word program time
Page erase time
Mass erase time
Parameter Name
Crystal reference
External clock reference
PLL frequency
PLL lock time
Parameter Name
Deep-Sleep mode
GND
C
L
b
= 50 pF
a
a
3.579545
3.579545
Min
Conditions
LDO = 2.25 V
Peripherals = All OFF
System Clock = MOSC/16
-
-
Preliminary
Nom
200
-
-
-
8.192
8.192
Max
0.5
-
MHz
MHz
MHz
Unit
ms
a
Nom
950
1150
Max
LM3S308 Microcontroller
10,000
Unit
Min
200
μA
10
20
20
100,000
Nom
-
-
-
-
Max
-
-
-
-
-
cycles
years
Unit
ms
ms
µs
389