HMPSA05 Hi-Sincerity Mocroelectronics, HMPSA05 Datasheet

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HMPSA05

Manufacturer Part Number
HMPSA05
Description
NPN SILICON TRANSISTOR
Manufacturer
Hi-Sincerity Mocroelectronics
Datasheet
HMPSA05
NPN SILICON TRANSISTOR
Description
Amplifier transistor
Absolute Maximum Ratings
Characteristics
*VCE(sat)
Storage Temperature ............................................................................................ -55 ~ +150 C
Junction Temperature ................................................................................... +150 C Maximum
Total Power Dissipation (Ta=25 C) ............................................................................... 625 mW
VCBO Collector to Base Voltage ........................................................................................ 60 V
VCEO Collector to Emitter Voltage ..................................................................................... 60 V
VEBO Emitter to Base Voltage ............................................................................................. 4 V
IC Collector Current ....................................................................................................... 500 mA
Maximum Temperatures
Maximum Power Dissipation
Maximum Voltages and Currents (Ta=25 C)
*VBE(on)
BVCBO
BVCEO
BVEBO
Symbol
*hFE1
*hFE2
ICBO
ICEO
fT
Min.
100
60
60
50
50
4
-
-
-
-
HI-SINCERITY
MICROELECTRONICS CORP.
(Ta=25 C)
Typ.
-
-
-
-
-
-
-
-
-
-
Max.
0.25
100
100
1.2
-
-
-
-
-
-
MHz
Unit
nA
nA
V
V
V
V
V
*Pulse Test : Pulse Width 380us, Duty Cycle 2%
IC=100uA, IE=0
IC=1mA, IB=0
IE=100uA, IC=0
VCB=60V, IE=0
VCE=60V, IB=0
IC=100mA, IB=10mA
IC=100mA, VCE=1V
IC=10mA, VCE=1V
IC=100mA, VCE=1V
IC=10mA, VCE=2V, f=100MHz
Test Conditions
Spec. No. : HE6301-B
Issued Date : 1992.09.09
Revised Date : 2000.10.01
Page No. : 1/4
HSMC Product Specification

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HMPSA05 Summary of contents

Page 1

... HI-SINCERITY MICROELECTRONICS CORP. HMPSA05 NPN SILICON TRANSISTOR Description Amplifier transistor Absolute Maximum Ratings Maximum Temperatures Storage Temperature ............................................................................................ -55 ~ +150 C Junction Temperature ................................................................................... +150 C Maximum Maximum Power Dissipation Total Power Dissipation (Ta=25 C) ............................................................................... 625 mW Maximum Voltages and Currents (Ta=25 C) VCBO Collector to Base Voltage ........................................................................................ 60 V VCEO Collector to Emitter Voltage ..................................................................................... 60 V VEBO Emitter to Base Voltage ...

Page 2

HI-SINCERITY MICROELECTRONICS CORP. Characteristics Curve Current Gain & Collector Current 1000 100 10 0 Collector Current (mA) On Voltage & Collector Current 10000 1000 V BE(on) 100 0 Collector Current (mA) Capacitance & Reverse-Biased Voltage 100 ...

Page 3

HI-SINCERITY MICROELECTRONICS CORP. PD-Ta 700 600 500 400 300 200 100 100 Ambient Temperature-Ta( 120 140 160 o C) Spec. No. : HE6301-B Issued Date : 1992.09.09 Revised Date : 2000.10.01 Page No. : ...

Page 4

HI-SINCERITY MICROELECTRONICS CORP. TO-92 Dimension Inches DIM Min. Max. A 0.1704 0.1902 B 0.1704 0.1902 C 0.5000 - D 0.0142 0.0220 E - *0.0500 F 0.1323 0.1480 Notes : ...

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